批发数量梯度价格
绝缘栅(MOSFET)
SMD(SO)/表面封装
N-FET硅N沟道
种类:绝缘栅(MOSFET),沟道类型:N沟道,导电方式:增强型,用途:S/开关,封装外形:SMD(SO)/表面封装,材料:N-FET硅N沟道,最大漏极电流:7000,夹断电压:30,低频跨导:300
种类:绝缘栅(MOSFET),沟道类型:N沟道,导电方式:增强型,用途:S/开关,封装外形:SMD(SO)/表面封装,材料:N-FET硅N沟道,最大漏极电流:5000,夹断电压:20,低频跨导:300
种类:绝缘栅(MOSFET),沟道类型:N沟道,导电方式:增强型,用途:S/开关,封装外形:SMD(SO)/表面封装,材料:N-FET硅N沟道,最大漏极电流:5000,夹断电压:20,低频跨导:300
种类:绝缘栅(MOSFET),沟道类型:N沟道,导电方式:增强型,用途:S/开关,封装外形:SMD(SO)/表面封装,材料:N-FET硅N沟道
种类:绝缘栅(MOSFET),沟道类型:N沟道,导电方式:增强型,用途:UNI/一般用途,封装外形:SMD(SO)/表面封装,材料:N-FET硅N沟道
沟道类型:其他,材料:硅(Si),功率特性:大功率,集电极最大耗散功率PCM:2,产品性质:热销,营销方式:现货,极性:NPN型,封装形式:TO-220,集电极最大允许电流ICM:1.5,截止频率fT:100,结构:点接触型,封装材料:金属封装,频率特性:超高频,应用范围:达林顿
种类:结型(JFET),沟道类型:P沟道,导电方式:增强型,用途:L/功率放大,封装外形:LLCC/无引线陶瓷片载,材料:GE-N-FET锗N沟道
种类:绝缘栅(MOSFET),沟道类型:N沟道,导电方式:增强型,用途:HF/高频(射频)放大,封装外形:CHIP/小型片状,材料:N-FET硅N沟道
种类:绝缘栅(MOSFET),沟道类型:N沟道,导电方式:增强型,用途:CC/恒流,封装外形:SMD(SO)/表面封装,材料:N-FET硅N沟道,最大漏极电流:原厂规格,低频噪声系数:原厂规格,低频跨导:原厂规格
￥1280.00/PCS
沟道类型:其他,材料:硅(Si),集电极最大耗散功率PCM:1200,封装形式:贴片型,集电极最大允许电流ICM:24db,极性:NPN型,截止频率fT:225,结构:点接触型,封装材料:金属封装,加工定制:否,属性:属性值,应用范围:微波
贴片场效应管
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新手来认识下八个针脚的新型贴片MOS管
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i.jpg (26.6 KB, 下载次数: 0)
八角贴片MOS管
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这就是传说的MOS管
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再来个原理图就更好了
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这还新型？？前几年就早出了&&好不好
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笔记本上都是这种的。目前台式机的主板上也是这种MOS管。
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现在的华硕主板上 这种MOS大多数 都是这样的
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哪个脚是Ｄ极，哪个脚是Ｇ极？Ｓ极？能说明一下排列规律就更好了。
pcb上，一边是四个脚连在一起时D，一边是3个连在一起时S，剩下一个单独的是G&
123 导通的话就是 S极
5678是 D极
123不导通就是双管子
1是S1 2是G1
3是S2 4是G2 56是D2&
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笔记本上不是很多这种吗，不新了吧
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现在都是上管和下管云一体了
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这个管子不新了，现在双MOS管的都多起来了
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这个给我这个做笔记本7年的人看，只能说7年前 笔记本上就有了
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发个图& &如何测量
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发个图&&看看如何测量
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承接同行笔记本、主板维修QQ
几年前就看到过了，笔记本上常用
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我是新手，真好需要的，
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混迹论坛，技术很烂
估计你看到B460上面的乌龟壳会傻眼。
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笔记本上基本都是用这个MOS。
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哪个脚是Ｄ极，哪个脚是Ｇ极？Ｓ极？能说明一下排列规律就更好了。
123 导通的话就是 S极&&4是G极&&5678是 D极&&如果&&123不导通就是双管子&&1是S1 2是G1&&78是D1&&3是S2 4是G2 56是D2
很好！谢谢指教！&
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修好高兴，修不好不高兴。
这不都一样的嘛。
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123 导通的话就是 S极&&4是G极&&5678是 D极&&如果&&123不导通就是双管子&&1是S1 2是G1&&78是D1&&3是S2 4 ...
很好！谢谢指教！
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这个真的已经有好多了
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& 2017 Comsenz Inc.贴片MOS管上面是W2N,边上有个42,是什么管啊?_百度知道
贴片MOS管上面是W2N,边上有个42,是什么管啊?
贴片MOS管上面是W2N,边上有个42,是什么管啊?
我有更好的答案
这是很常用的MOS来的
需要请跟我联络发资料给你确认其参数电路
别说废话，有具体的参数吗？贴片MOS管上面是W2N,边上有个42,是什么管啊?
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贴片MOS管芯片手册
PRODUCT GUIDEMOSFETsSEMICONDUCTORhttp://www.semicon.toshiba.co.jp/engC O N T E N T S1 Features and Structures ....................................................................... 3 ........ 4 2 MOSFET Product Lines and Part Numbering Schemes2-1 MOSFET Product Lines ................................................................................... 4 2-2 Part Numbering Schemes ................................................................................ 53 Selection Guide (By Absolute Maximum Ratings) ............................. 6 4 Low-VDSS MOSFETs (in Small SMD Packages) ................................. 164-1 Packaging Options ......................................................................................... 16 ? SSM Series ? TPC Series 4-2 Application Examples and Block Diagrams .................................................... 17 ? Cell Phone (Power Supply Circuit) ? Notebook PC (Power Supply Circuit) ? Lithium-Ion Secondary Battery Protection Circuits ? Motor Driver (Power Driver Circuit) 4-3 Low-VDSS MOSFET Roadmaps ..................................................................... 19 ? Roadmap for Trench MOSFETs ? Package Options 4-4 Low-VDSS, High-Speed MOSFETs ................................................................. 21 ? Synchronous Rectification DC-DC Converters C Block Diagram, Timing Chart and Power Loss Factors C Summary Results of Power Loss Simulation and Key Parameters for MOSFETs C Efficiency Improvement by Thermally Enhanced Package and New Process Technology C MOSBD (MOSFET with SBD) ? High-Speed MOSFET Offerings 4-5 Low-VDSS, Low-RDS(ON) MOSFETs (for Lithium-Ion Battery Protection) ......... 26 ? Lithium-Ion Battery Protection Circuit Trend ? MOSFET Roadmap ? Low-ON-resistance N-Channel Power MOSFETs ? Low-ON-resistance P-Channel Power MOSFETs 4-6 Semi-Power MOSFET Offerings .................................................................... 28 ? Semi-Power P-Channel Single MOSFETs ? Semi-Power N-Channel Single MOSFETs ? Semi-Power Dual MOSFETs ? MOSFET with a Schottky Barrier Diode ? VS-6 Series … [Part Number: TPC6xxx] ? VS-8 Series … [Part Number: TPC8Fxxx] ? PS-8 Series … [Part Number: TPCP8xxx] ? Chip LGA Series ? STP2 Series ... [Part Number: TPCT4xxx] ? TSON Advance Series ? TSSOP-8 Series … [Part Number: TPCS8xxx] ? TSSOP Advance Series … [Part Number: TPCM8xxx] ? SOP-8 Series … [Part Number: TPC8xxx] ? SOP Advance Series … [Part Number: TPCA8xxx] ? D-PAK Series ... [Part Number: TKxxPxxxM1] 4-7 Standard MOSFET Series (ID & 500 mA)....................................................... 36 ? Single MOSFETs ? Dual MOSFETsMOSFET devices meet the needs of a wide range of ultra-high-density applications.5 Low-VDSS, High-Qg MOSFETs ............................................................. 375-1 TO-220SM(W) Series ..................................................................................... 37 5-2 U-MOS (Trench Type) Series ......................................................................... 38 5-3 U-MOS Series for Synchronous Rectification (VDSS = 60 V to 150 V) ............ 396 Mid- and High-VDSS MOSFETs .............................................................406-1 6-2 6-3 6-4 π-MOSVII Series (VDSS = 450 V to 650 V) ..................................................... 40 Super-Junction DTMOS Series (VDSS = 600 V, 650 V) ................................... 41 High-speed π-MOS Series (VDSS = 450 V to 600 V)....................................... 42 π-MOS Series................................................................................................. 437 MOSFET Part Numbers ........................................................................ 467-1 Alphanumeric Index of Part Numbers ............................................................ 468 Product Obsolescence ........................................................................ 538-1 End-of-Life Products ...................................................................................... 539 Packaging ............................................................................................. 559-1 Compact Surface-Mount Packages ................................................................ 55 9-2 Through-Hole Packages................................................................................. 6621Features and Structures1) No ca superior frequency and switching characteristics 2) Rugged and no current concentration 3) Voltage-controlled device, hence low drive power 4) Easy parallel connection■MOSFETs have the following additional features:1) Guaranteed avalanche capability................. 2) Improved functioning of built-in diodes ........ 3) High ruggedness .......................................... 4) High-speed switching ................................... 5) Low R(DS)ON ................................................... 6) Smaller packages ......................................... 7) Low drive loss ............................................... Allows an absorber circuit to be simplified Enhanced circuit design flexibility Increased margin for circuit design Higher speed in end-product’s operation Reduced end-product’s power consumption Reduced end-product size Reduced end product’s power■ Structures of MOSFETsDouble-Diffusion StructureSource Gate● π-MOSP n+n nC n++PToshiba Power MOSFETs use a double-diffusion MOS (D-MOS) structure, which produces high-withstand voltage, to form channels. This structure is especially well suited to high-withstand voltage and high-current devices. A high level of integration yields a high-performance Power MOSFET with low ON-resistance and low power loss.DrainTrench StructureSource Gaten+ P nC n+n+ P● U-MOSHigher channel density is achieved by connecting channels vertically to form a U-groove at the gate region, a structure that yields a lower ON-resistance than other MOSFET structures.DrainSuper-Junction StructureSource Gaten+ P n n+n+ P● DTMOSThe super-junction structure, which has P-type pillar layers as shown left, realizes high withstand voltage and ON-resistance lower than the conventional theoretical limit of silicon.Drain32MOSFET Product Lines and Part Numbering2-1 MOSFET Product LinesSSM Series (VDSS = 12 V to 60 V)Very compact and thin, the SSM Series is suitable for use in various electronic devices. The SSM Series is available in a wide range of packages and features low voltage drive. ■ Applications ● Cell phones ● Notebook PCs ● Portable electronic devices ● Small-signal switchingVS and PS Series (VDSS = 12 V to 40 V)Very compact and thin, the VS and PS Series are suitable for use in various electronic devices. ■ Applications ● Cell phones ● Notebook PCs ● Portable electronic devicesChip LGA and STP Series (VDSS = 20 V to 30 V)The LGA and STP Series are housed in an ultra-small and thin package and are suitable for use in lithium-ion secondary battery protection circuits in various portable electronic devices. ■ Applications ● Lithium-ion secondary battery protection circuitsSOP and TSON Series (VDSS = 20 V to 60 V)The SOP and TSON Series are compact and thin, and require only a small mounting area. They are suitable for lithium-ion secondary battery protection circuits and notebook PCs.■ Applications ● Lithium-ion secondary battery protection circuits ● Notebook PCs ● Portable electronic devices ● DC-DC convertersTO-220SM(W) Series (VDSS = 40 V to 150 V)The TO-220SM package, which uses Cu connectors and a wide source terminal, realizes low ON-resistance and a high current-carrying capability. ■ Applications ● Motor drivers ● Switching power suppliesLow-VDSS, High-Qg U-MOS Series (VDSS = 40 V to 100 V)High integration is achieved using a trench technology. Low-voltage drive (VGS = 4 V) is possible due to ultra-low ON-resistance. ■ Applications ● Motor drivers ● Solenoids and lamp driversU-MOS Series for Synchronous Rectification (VDSS = 60 V to 150 V)Fabricated using a trench technology, the U-MOS Series is ideal for synchronous rectification on the secondary side of power supply circuits. ■ Applications ● Switching power supplies ● AC adapters ● Motor driversNew π-MOSVII Series (VDSS = 450 V to 650 V)The latest addition to the π-MOS portfolio, the π-MOSVII Series offers reduced capacitances due to optimized chip design and is available with a greatly wider range of electrical characteristics. ■ Applications ● Switching power supplies ● AC adaptersSuper-Junction DTMOS Series (VDSS = 600, 650 V)The super-junction DTMOS Series achieves low ON-resistance and low gate charge (Qg) due to the use of the latest super-junction structure. ■ Applications ● Switching power supplies ● AC adapters ● Motor driversHigh-Speed π-MOS Series (VDSS = 450 V to 600 V)The new High-Speed π-MOS Series achieves higher switching speed than the well-proven π-MOS Series. Two series are available: high-speed switching series and high-speed diode series. ■ Applications ● Inverters ● Switching power supplies ● Motor drivers ● AC adapters4Schemes2-2 Part Numbering Schemes■ Small-Signal MOSFET (SSM) SeriesSSM 3 K 101 TUPackage Serial number of the products Polarity and internal configurationK: N-channel, single J: P-channel, single N: N-channel, dual P: P-channel, dual L: N-channel and P-channel (dual) E: N-channel and P-channel (pre-wired as a load switch) H: N-channel and SBD G: P-channel and SBD&3-pin&F: S-Mini FU: USM FS: SSM FV: VESM T: TSM TU: UFM CT: CST3 CTB: CST3B&4-pin&CT: CT4&6-pin&FU: US6 FE: ES6 TU: UF6 CTD: CST6D&5-pin&F: SMV FU: USV FE: ESV TU: UFVPin count Small-Signal MOSFET■ Multi-Pin Series■ New Series■ Conventional SeriesTPCM8 0 01 -HH: High-speed type None: Low-ON-resistance type Serial number of the products 0: N-channel, single 1: P-channel, single 2: N-channel, dual 3: P-channel, dual 4: N-channel and P-channel, dual A: N-channel and SBD B: P-channel and SBD J: P-channel and NPNTK 55 A 10 J 1Additional information 1: Low-capacitance type 3: Low-ON-resistance type 5: Fast body diode type2SK ? ? ? ?N-channel MOS2SJ ? ? ? ?P-channel MOSSeries C: π-MOSVI D: π-MOSVII J: U-MOSIII M: U-MOSVITPC6: VS-6 Series TPCF8: VS-8 Series TPCP8: PS-8 Series TPCC8: TSON Advance Series TPCS8: TSSOP-8 Series TPCM8: TSSOP Advance Series TPC8: SOP-8 Series TPCA8: SOP Advance Series TPCT4: STP Series TPCL4: Chip LGAK: U-MOSIV T: DTMOSI U: DTMOSIIVoltage: 10% of the VDSS Package A: TO-220SIS D: TO-220(W) F: TO-220SM(W) J: TO-3P(N) X: TFP P: D-PAK(SMD) Q: New PW-Mold2Current rating TK: N-channel TJ: P-channel53VDSS (V) ID (A)Selection Guide (By Absolute Maximum Ratings)12 20 24 30 40 502SJ343(50)? 2SJ344(50)? SSM3K04FU(12)? SSM3K16FU(15)? SSM3J16FU(45)? SSM3K04FS(12)? SSM3K16FS(15)? SSM3J16FS(45)? SSM3J35FS(44)? SSM3K03FV(12)? SSM3K04FV(12)? SSM3K16FV(15)? SSM3J16FV(45)? SSM3J35MFV(44)? SSM3K16CT(15)? SSM3J16CT(45)? SSM3J35CT(44)? SSM6N04FU(12)? SSM6N16FU(15)? SSM6P16FU(45)? SSM6P35FU(44)? SSM6N03FE(12)? SSM6N16FE(15)? SSM6P16FE(45)? SSM6L16FE(15)? SSM6P35FE(45)? SSM5N16FU(15)? SSM5P16FU(45)? SSM5N03FE(12)? SSM5N16FE(15)? SSM5P16FE(45)? SSM3K35FS(20)? SSM3K35MFV(20)? SSM3K35CT(20)? SSM6N35FU(20)? SSM6L35FU(20)? SSM6N35FE(20)? SSM6L35FE(20)? SSM3K)? SSM3K7002AF(3.3)? SSM3J05FU(4)? SSM6P05FU(4)? SSM5P05FU(4)? 2SJ305(4)? 2SK2009(2)? SSM3J09FU(4.2)? SSM6P09FU(4.2)? SSM3K7002FU(3.3)? SSM3K7002AFU(3.3)? SSM6N7002FU(3.3)? SSM6N7002AFU(3.3)? 2SJ168(2)? 2SK1062(1)? SSM6N37CTD(5.6)? SSM3J36TU(3.6)? SSM3J36FS(3.6)? SSM3J36MFV(3.6)? SSM6P36TU(3.6)? SSM6P36FE(3.6)? SSM6L05FU(1.2)? SSM6N05FU(1.2)? SSM3K05FU(1.2)? SSM5N05FU(1.2)? SSM4K27CT(0.205)? SSM6L10TU(0.145)? SSM6L11TU(0.145)? SSM6L12TU(0.145)? SSM6N25TU(0.145)? SSM6N36TU(1.52)? SSM6P25TU(0.26)? SSM6P26TU(0.23)? SSM6J25FE(0.26)? SSM6J26FE(0.23)? SSM6K25FE(0.145)? SSM6L36TU(1.52)? SSM3K36FS(1.52)? SSM3K36MFV(1.52)? SSM3K36TU(1.52)? SSM6N36FE(1.52)? SSM6L36FE(1.52)? SSM6L09FU(1.2)? SSM6N09FU(1.2)? SSM3K09FU(1.2)?60100150180200250400450500525550600650700VDSS (V) ID (A)0.050.050.1SSM3K15F(7)? SSM3J15F(32)? SSM3K15FU(7)? SSM3J15FU(32)? SSM3K15FS(7)? SSM3J15FS(32)? SSM3K15FV(7)? SSM3J15FV(32)? SSM3K15CT(7)? SSM3J15CT(32)? SSM6N15FU(7)? SSM6P15FU(32)? SSM5N15FU(7)? SSM5P15FU(32)? SSM6N15FE(7)? SSM6P15FE(32)? SSM5N15FE(7)? SSM5P15FE(32)?SSM3K17FU(40)? SSM6N17FU(40)?0.10.180.180.20.20.250.250.330.330.40.42SK2998 (20)? 2SK3302 (18)? 2SK3471 (18)?0.5SSM6N24TU(0.145)? SSM6K24FE(0.145)?0.50.6 0.65 0.7 0.8SSM6J06FU(0.5)? SSM6P41FE(0.3)? SSM6L13TU(0.143)? SSM6N29TU(0.143)? SSM6P28TU(0.234)? SSM6J205FE(0.234)?0.6 0.65 0.7 0.8SSM6J07FU(0.8)?LegendProduct series ? : L2-π-MOSV ? : π-MOSIV? : π-MOSIII ? : π-MOSV ? : π-MOSVI ? : L2-π-MOSVI ? : U-MOS ? : π-MOSVII ? : DTMOSII ? : DTMOSIPackageS-MiniPW-Mini VS-8 SOP-8 Lead Clamp SOP AdvanceVS-6 ? PS-8 STP TO-220NIS TO-220SIS SSM VESMTO-92MOD TO-220AB CST3 CST3BPW-Mold TO-220(W) CST4New PW-Mold TFP SMV US6TSON Advance UF6New PW-Mold2 TO-220SM(W) ES6 CST6DDP TO-3P(N) USVTPS UFVTSSOP Advance TO-3P(N)IS ESVTSSOP-8 TO-3P(L)SOP-8 Chip LGATO-220FL/SMNotes: ( ) = RDS(ON) max $ = 10-V drive # = 2.5-V drive? = 1.8-V drive = High-speed diode N = N-chP = P-ch CN = Complementary N-ch CP = Complementary P-chNS = N-ch + SBD PD = P-ch + Driver PS = P-ch + SBD (load switch) [ ] = Under developmentTSMUSMUFM673VDSS (V) ID (A)PS PSSelection Guide (By Absolute Maximum Ratings)12 20SSM3J111TU(0.48)? SSM3J46CTB(0.103)?24PS30SSM5G01TU(0.8)?4050602SJ360 (0.73)? 2SJ507 (0.7)?1002SK)? 2SK)? 2SJ508 (1.9)? 2SJ509 (1.9)?1502SK)1802SJ313 (5.0) 2SJ338 (5.0) 2SK) 2SK)2002SK)? CP CN250TPC)? TPC)?4002SK)?4502SK)? 2SK)? 2SK)?5005255506002SK3371 (9)? 2SK4026 (9)?8009002SK)? 2SK2845 (9)? 2SK3301 (20)?1000VDSS (V)ID (A)SSM5G02TU(0.16)? SSM5G04TU(0.24)? SSM6E01TU(0.16)?1 1.1PD1 1.1SSM6K06FU(0.16)? SSM6J23FE(0.16)? SSM3K106TU(0.53)? SSM6P54TU(0.228)? NS SSM5H07TU(0.54)?SSM3J112TU(0.79)?1.21.2SSM6K31FE(0.54)? SSM6K30FE(0.42)?1.3NS SSM5H03TU(0.3)?SSM6J08FU(0.18)? PS TPCP8BA1(0.18)? SSM6K22FE(0.17)?SSM6J207FE(0.491)? SSM3J118TU(0.48)? SSM6P40TU(0.403)? PS SSM5G11TU(0.403)? NS SSM5H01TU(0.45)? SSM6K210FE(0.371)? SSM3J02T(0.5)? SSM3K128TU(0.36)? PS SSM5G10TU(0.213)? SSM6K07FU(0.22)? SSM3J313T(0.268)? NS SSM5H11TU(0.182)? SSM6L40TU(0.182)? SSM6N40TU(0.182)? SSM3J01T(0.4)? SSM3J305T(0.477)?TPCS8004-H (0.8)?1.31.41.4PSSSM5G09TU(0.13)?1.5SSM3K107TU(0.41)? SSM6P39TU(0.213)? NS SSM5H05TU(0.16)? NS SSM5H08TU(0.16)? NS SSM5H10TU(0.19)? NS TPCP8AA1(0.105)? SSM6L39TU(0.119)? SSM6N39TU(0.119)? SSM6K08FU(0.105)? SSM3J113TU(0.169)?1.51.61.61.7PD SSM6E03TU(0.144)?TPCS8008-H (0.58)? TPC8012-H (0.4)?1.71.8SSM3J108TU(0.158)? SSM3J114TU(0.149)? PD SSM6E02TU(0.136)? SSM6J53FE(0.136)? NS SSM5H12TU(0.133)? SSM6K208FE(0.133)? SSM3J109TU(0.13)? SSM3K122TU(0.123)? SSM6K405TU(0.123)? SSM6J206FE(0.13)? SSM6K204FE(0.126)? SSM3J117TU(0.225)? SSM3K127TU(0.123)? SSM6J402TU(0.225)? 2SK)? 2SK)? 2SK)? SSM6K407TU(0.44)? SM6K32TU(0.044)? TPCS8009-H (0.35)? TPCP8003-H (0.18)? TPC8214-H (0.18)?1.8TPCS8007-H (0.45)? 2SJ610 (2.55)? 2SK)? 2SK)? 2SK)? 2SK)? 2SK)? 2SK)? 2SK)? 2SK4002 (5)? TK2Q60D (5)?1.91.9222.1 2.2 2.3 2.4SSM6J50TU(0.064)? SSM3J110TU(0.094)? SSM3J304T(0.127)? SSM3J115TU(0.098)? SSM3K101TU(0.103)?SSM3K116TU(0.1)? SSM3K105TU(0.2)? SSM6K202FE(0.085)? SSM3J306T(0.225)? SSM3K124TU(0.12)? SSM3K119TU(0.08)? SSM3K02T(0.2)? SSM6J401TU(0.145)? SSM3K318T(0.145)?2.1 2.2 2.3 2.42SJ567 (2.0)? 2SJ680 (2.0)? TK3A60DA (2.8)? 2SK)?2.5 2.6SM3J312T(0.091)? SSM3K102TU(0.071)? TPC)? TPCF)? TPCF8B01 (0.11)? TPCF)? SSM6K203FE(0.061)?2.5 2.6SSM3J14T(0.17)?2.7 2.8 2.9SSM3J13T(0.07)? SSM6J21TU(0.05)?2.7 2.8 2.92SK)? 2SK)? 2SK)? 2SK)? 2SK)? 2SK)? 2SK)? 2SK)? 2SK)? 2SK)? 2SK)? 2SK)? 2SK)?SSM3K303T(0.12)? TPCF)? TPCF8A01 (0.049)? TPCF)? TPCF)? SSM3K104TU(0.056)? SSM6K404TU(0.055)? SSM3K121TU(0.048)? SSM6K211FE(0.047)? SSM3K12T(0.175)? SSM3K302T(0.071)? SSM6K34TU(0.077)? NS SSM5H14F(0.078)?333.2 3.4TPCF)? TPCF)? SSM3K01T(0.12)? TPCP)? TPCP)? TK4A55DA (2.45)? 2SK)? 2SK)? TK4A60DA (2.2)?3.2 3.4 3.5 3.6 3.8TPC6006-H (0.075)?SSM3K301T(0.056)?SSM3J314T(0.1)?3.5 3.6 3.8 3.9SSM6J51TU(0.054)? SSM3J317T(0.107)? TPCP)?SSM3J120TU(0.038)? SSM6K18TU(0.04)?4TPCF)? TPCP)? TPCP)? SSM3K316T(0.065)? SSM3K14T(0.067)?TPCA8008-H (0.58)?TK4A50D (2.0)?TK4A55D (1.9)?TK4A60D (1.7)?2SK)?2SK) 2SK)4LegendProduct series ? : L2-π-MOSV ? : π-MOSIV? : π-MOSIII ? : π-MOSV ? : π-MOSVI ? : L2-π-MOSVI ? : U-MOS ? : π-MOSVII ? : DTMOSII ? : DTMOSIPackageS-MiniVS-8 PW-Mini SOP-8 Lead Clamp SOP Advance TSM USM UFMVS-6 ? PS-8 STP TO-220NIS TO-220SIS SSM VESMTO-92MOD TO-220AB CST3 CST3BPW-Mold TO-220(W) CST4New PW-Mold TFP SMV US6TSON Advance UF6New PW-Mold2 TO-220SM(W) ES6 CST6DDP TO-3P(N) USVTPS UFVTSSOP Advance TO-3P(N)IS ESVTSSOP-8 TO-3P(L)SOP-8 Chip LGATO-220FL/SMNotes: ( ) = RDS(ON) max $ = 10-V drive # = 2.5-V drive? = 1.8-V drive = High-speed diode N = N-chP = P-ch CN = Complementary N-ch CP = Complementary P-chNS = N-ch + SBD PD = P-ch + Driver PS = P-ch + SBD (load switch) [ ] = Under development893VDSS (V) ID (A)Selection Guide (By Absolute Maximum Ratings)12 20SSM3K123TU(0.028)? SSM6K403TU(0.028)?2430TPCP)? TPCP)? SSM3K320T(0.077)? SSM6K406TU(0.0385)? TPC)? TPC)?4050601001501802002504004505005255506006507008009001000VDSS (V) ID (A)4.2 4.4 4.5 4.6 4.7 4.84.2 4.42SK)? 2SK)?SSM3J130TU(0.0258)? TPC)?4.5 4.6SSM3J129TU(0.046)? SSM3K309T(0.031)? TPCP)? TPCP)? TPCP8103-H (0.040)? TPC)? TPCS)? TPCS)? TPCS)? TPCS)? TPCP)? TPCP)? SSM3J307T(0.031)? SSM3K310T(0.028)? TPCS)? TPCF)? TPC8104-H (0.065)? TPC6007-H (0.054)? TPC6109-H (0.059)? 2SK)? 2SJ537 (0.19)? 2SJ668 (0.17)? 2SJ681 (0.17)? 2SJ378 (0.19)? 2SJ669 (0.17)? 2SJ438 (0.19)? 2SK)? 2SK)? 2SK)? TPC8213-H (0.05)? 2SK)? 2SK)? 2SK)? 2SK) 2SJ407 (1.0)? 2SK)? 2SK)? 2SK)? 2SK)? 2SJ512 (1.25)? 2SK)? 2SK)? 2SK)? 2SK)? 2SK)? 2SK)? TK5A50D (1.5)? TK5A55D(1.88)? TK5A65D (1.45)? 2SK) 2SK)? 2SK)? 2SK)? 2SK)? 2SK)4.7 4.8555.2 5.4 5.5 5.6TPCF)? TPC)? TPC)?SSM3J321T(0.046)?SSM3K131TU(0.0415)? TPC)? TPCP)? TPCT)? TPCT)? TPC)? TPCF)? TPC)? TPCS)? TPCS)? TPCS)? TPCS)? TPCS)? TPCS)? TPCS)? TPCL)? TPCL)? TPCT)? TPCT)? TPC)? TPC)? TPCF)? TPCP8J01 (0.035) (-32V)? TPCF)? TPCS)? TPC8A01 (0.025)? TPC8212-H (0.021)? TPC)? SSM3K315T(0.0415)? TPCL)? 2SJ516 (0.8)? TK6A50D (1.48)? TK6A53D (1.3)? 2SK)? 2SK)? 2SK)? TK6A60D (1.25)? 2SK)? TK6A65D (1.11)? 2SK)? 2SK)? TPC)? TPCP)? TPCA8010-H (0.45)? 2SK)? 2SK)? TK6A55DA(1.48)?5.2 5.4 5.5 5.6666.5 6.7 7 7.2 7.5TPCP)? SSM6J409TU(0.0221)?TPC8216-H (0.020)?2SK)? 2SK)?6.5 6.7TPCF)? TPCP8001-H (0.016)?TPC8406-H (0.027)? TPC8406-H (0.03)?TPCA8009-H (0.35)?2SK)?2SK)?2SK)7 7.2TPCA8020-H (0.027)? TPC8022-H (0.027)? TPC8116-H (0.03)? TPCA8107-H (0.03)? TPC)? TPC)?2SK)? 2SK)?TK8A55DA(1.07)?7.52SK)? 2SK)? 2SK)? TK8A50D (0.85)? 2SK)? 2SK)? 2SK)? 2SK)? 2SK)?8TPC8021-H (0.017)?88.3 8.5 9TPCP)? TPC)?TPCP)? TPC8A01 (0.018)? TPC8053-H (0.0232)? 2SK)? 2SJ200 (0.83) 2SK) 2SK) 2SJ618 (0.37) 2SK)? 2SK)? TK9A55DA(0.86)? 2SK)? 2SK)? 2SK)? 2SK)? 2SK)? TK10A50D (0.72)? 2SK)? 2SK)? 2SK)? 2SK)? 2SK)? TK10A60D (0.75)? 2SK)? 2SK)? 2SK)? 2SK)? 2SK)? 2SK)? TPC)? TPC)? TPC8A05-H (0.012)? 2SK)? 2SK)? 2SK)?8.3 8.5 91010LegendProduct series ? : L2-π-MOSV ? : π-MOSIV? : π-MOSIII ? : π-MOSV ? : π-MOSVI ? : L2-π-MOSVI ? : U-MOS ? : π-MOSVII ? : DTMOSII ? : DTMOSIPackageS-MiniVS-8 PW-Mini SOP-8 Lead Clamp SOP Advance TSM USM UFMVS-6 ? PS-8 STP TO-220NIS TO-220SIS SSM VESMTO-92MOD TO-220AB CST3 CST3BPW-Mold TO-220(W) CST4New PW-Mold TFP SMV US6TSON Advance UF6New PW-Mold2 TO-220SM(W) ES6 CST6DDP TO-3P(N) USVTPS UFVTSSOP Advance TO-3P(N)IS ESVTSSOP-8 TO-3P(L)SOP-8 Chip LGATO-220FL/SMNotes: ( ) = RDS(ON) max $ = 10-V drive # = 2.5-V drive? = 1.8-V drive = High-speed diode N = N-chP = P-ch CN = Complementary N-ch CP = Complementary P-chPD = P-ch + Driver NS = N-ch + SBD (load switch) PS = P-ch + SBD [ ] = Under development10113VDSS (V) ID (A)Selection Guide (By Absolute Maximum Ratings)20N N N P P P P N N N P P N N30TPC)? TPC8021-H (0.017)? TPC)? TPC)? TPC)? TPCS5)? TPCS)? TPC5) TPC8031-H (0.0133)? TPCP8005-H (0.0133)? TPC)? TPC0)? TPC8037-H (0.0114)? N TPC8038-H (0.0114)?4050N60TPC8050-H (0.0145)?75801001502002SK)?250300450500525550TK11A55D (0.63)?600TK11A60D (0.65)?900/1000VDSS (V) ID (A)1111TPC8052-H (0.0121)?2SJ380 (0.21)?12 12.52SJ201 (0.625) 2SK)2SK)? 2SK)? TK12A50D (0.52)? 2SK)? TK13A50DA (0.47)?TK12A53D (0.58)? TK12X53D (0.58)?TK12J55D (0.57)?2SK)? TK12A60U (0.4)? TK12D60U (0.4)? TK12J60U (0.4)? TK12A60D (0.55)?1000V:2SK)12 12.513N TPC)? N TPC6)? P TPC)? P P TPC)? TPC)NTPC8049-H (0.0107)?NTPC8051-H (0.0097)?2SK)? 2SK)?2SK)? 2SK)? 2SK)? TK13A45D (0.46)?TK13A50D (0.4)?TK13A60D (0.43)? 2SK)?900V:2SK)1314N P TPC8032-H (0.0065)? TPCC5)?2SJ304 (0.12) 2SJ312 (0.12) TPCA8053-H (0.0229)? 2SK)? 2SK)?2SK)? TK15A50D (0.3)? 2SK)? TK15J50D (0.4)?TK14A55D (0.37)?2SK)? 2SK)? TK15A60U (0.3)? TK15D60U (0.3)? TK15J60U (0.3)? TK15A60D (0.37)?14 151516NS TPC8A02-H (0.0056)? N N NS N N P N N N N N P N NS P P TPC8033-H (0.0053)? TPC8A03-H (0.0056)? TPC8039-H (0.0059)? TPCC8003-H (0.0193)? TPC5)? N TPC7)? N TPC3)? TPC8)? TPC8034-H (0.0035)? TPC4)? TPC9)? TPC8036-H (0.0042)? TPC8A04-H (0.0036)? TPC2)? TPCC)?TPC8047-H (0.0076)?NTPC8048-H (0.0069)?2SJ412 (0.21)? 2SJ619 (0.21)? 2SK)? 2SK)?TK16J55D (0.37)?16 1717TPC8045-H (0.0039)? TPC8046-H (0.0057)?2SJ464 (0.12)? 2SJ620 (0.09)? TPCA8006-H (0.067)2SK)? 2SK)?2SK)? TK18A50D (0.27)?181819N N TPCC8001-H (0.015)? N TPCC8002-H (0.015)? TPCM8A05-H (0.0172)? TPCA8A05-H (0.0172)? TPCA8052-H (0.0118)? 2SK)? 2SJ349 (0.045)? 2SJ401 (0.045)? 2SK)? 2SK)? TJ20A10M3 (0.090)? 2SK)? 2SK)? 2SK)?2SK)? TK20J50D (0.27)? 2SK)? TK20A60U (0.19)? TK20D60U (0.19)? TK20J60U (0.19)? 2SK)?1920NS NS2021 22 23LegendN NSTPCM8007-H (0.0129)? TPCC8A01-H (0.012)? TPCA8022-H (0.026)? 2SK)? 2SK)?21 22 23P = P-ch CN = Complementary N-ch CP = Complementary P-ch NS = N-ch + SBD PD = P-ch + Driver PS = P-ch + SBD (load switch) [ ] = Under developmentProduct series ? : L2-π-MOSV ? : π-MOSIV? : π-MOSIII ? : π-MOSV ? : π-MOSVI ? : L2-π-MOSVI ? : U-MOS ? : π-MOSVII ? : DTMOSII ? : DTMOSIPackageS-MiniVS-8 PW-Mini SOP-8 Lead Clamp SOP Advance TSM USM UFMVS-6 ? PS-8 STP TO-220NIS TO-220SIS SSM VESMTO-92MOD TO-220AB CST3 CST3BPW-Mold TO-220(W) CST4New PW-Mold TFP SMV US6TSON Advance UF6New PW-Mold2 TO-220SM(W) ES6 CST6DDP TO-3P(N) USVTPS UFVTSSOP Advance TO-3P(N)IS ESVTSSOP-8 TO-3P(L)SOP-8 Chip LGATO-220FL/SMNotes: ( ) = RDS(ON) max $ = 10-V drive # = 2.5-V drive? = 1.8-V drive = High-speed diode N = N-ch12133VDSS (V) ID (A)Selection Guide (By Absolute Maximum Ratings)20N N N NS N P N30TPCM8004-H (0.011)? TPCA8030-H (0.011)? TPCA8031-H (0.011)? TPCC8006-H (0.086)? TPCC)? TPCM7)? TPCM)?405060N TPCA8050-H (0.0142)?7580100150200250300450500525550600900/1000VDSS (V) ID (A)24242SK)? 2SK)? 2SK)? N TPCA8016-H (0.021)?TK25A10K3 (0.040)?25 26 27 28N TPCC5)?2SK)? 2SK)?2SK)25 26NTPCC8005-H (0.0073)?2SK)? 2SK)? 2SK)? N TPCA8049-H (0.0104)? N TPCA8051-H (0.0094)? 2SK)? 2SK)? 2SK)? 2SK)? 2SK)27 28 30 32 34N TPCA8018-H (0.0062)?30 32 34 35 36 38N TPCM8002-H (0.0062)?N TPCA8014-H (0.009)? N TPCA8027-H (0.010)? 2SK)? N TPCA8047-H (0.0073)?2SJ334 (0.038)? 2SJ402 (0.038)?TK30A06J3A (0.026)?NS TPCA8A02-H (0.0053)? N TPCA8039-H (0.0055)? N TPCA8012-H (0.0049)? N TPCA3)? N TPCA8015-H (0.0054)? 2SK5)? N TPCA8048-H (0.0066)? 2SK)? N TPCA8036-H (0.0038)? N TPCA8046-H (0.0054)? N TPCA8011-H (0.0035)? P P P N N N TPCA)? P TPCA5)? TPCA2)? N TK40P04M1 (0.0103)? TPCA7)? TPCA8012-H (0.0045)? TPCA6)? TK40P03M1 (0.0108)? P TPCA)? TK40A08K3 (0.009)? TK40D10J1 (0.015)? TK40A10J1 (0.015)? TK40A10K3 (0.015)? TK40X10J1 (0.020)? TK40J60T (0.08)?35 36 38404042NS TPCA8A04-H (0.0032)? $ N N N 2SK) TPCA8019-H (0.0031)? TPCA2)? TPCA3)? $ 2SK)? 2SK)? $ 2SK)? $ 2SK)? 2SK)? 2SK)? 2SK)? $ 2SK)? 2SK8)?42454546 50 55 60N TPCA8045-H (0.0036)? N TPCA8028-H (0.0028)? N TK50P04M1 (0.0087)? N TK50P03M1 (0.0075)? $ 2SK)? 2SK5)? 2SK)? $ 2SK)? TK55D10J1 (0.0105)? TK55A10J1 (0.0105)? 2SK)? 2SK)? TK70J04J3 (0.0038)? 2SK8)? TK70D06J1 (0.0064)? TK70A06J1 (0.0064)? TJ70A06J3 (0.008)? 2SK5)?2SK8)? 2SK8)?462SK) TK50X15J1 (0.03)? TK50F15J1 (0.03)? 2SK)? 2SK)?50 55 60TK60D08J1 (0.0078)? TK60A08J1 (0.0078)?2SK)70 75 80 100 120 130 150LegendProduct series ? : L2-π-MOSV ? : π-MOSIVTK150F04K3 (0.0021)? TK100F04K3 (0.003)?70 75TK80A08K3 (0.0045)? TK80D08K3 (0.0045)?80 100 120 130 150Notes: ( ) = RDS(ON) max $ = 10-V drive # = 2.5-V driveTK100F06K3 (0.005)? TJ120F06J3 (0.008)? TK130F06K3 (0.0034)?? : π-MOSIII ? : π-MOSV ? : π-MOSVI ? : L2-π-MOSVI ? : U-MOS ? : π-MOSVII ? : DTMOSII ? : DTMOSIPackageS-MiniPW-Mini VS-8 SOP-8 Lead Clamp SOP AdvanceVS-6 ? PS-8 STP TO-220NIS TO-220SIS SSM VESMTO-92MOD TO-220AB CST3 CST3BPW-Mold TO-220(W) CST4New PW-Mold TFP SMV US6TSON Advance UF6New PW-Mold2 TO-220SM(W) ES6 CST6DDP TO-3P(N) USVTPS UFVTSSOP Advance TO-3P(N)IS ESVTSSOP-8 TO-3P(L)SOP-8 Chip LGATO-220FL/SM? = 1.8-V drive = High-speed diode N = N-chP = P-ch CN = Complementary N-ch CP = Complementary P-chPD = P-ch + Driver NS = N-ch + SBD (load switch) PS = P-ch + SBD [ ] = Under developmentTSMUSMUFM14154Low-VDSS MOSFETs (in Small SMD Packages)4-1 Packaging OptionsSSM SeriesThe SSM Series comes in small, thin packages suitable for portable devices. Chip-scale packages (1006 size) help reduce system size.CST3Chip-Scale Package, Transfer Molded, 3-PinTypical product: SSM3K35CT1. 0.6 0Thickness: 0.38 typ.CST3BChip-Scale Package, Transfer Molded, 3-Pin, B-TypeTypical product: SSM3J46CTB0.8 1.2Thickness: 0.48 typ.VESM (SOT-723)Very Extreme Super-MiniTypical product: SSM3K35MFV1.2 0.88 0.Thickness: 0.5 typ.SSM (SOT-416)(SC-75)Small Super-MiniTypical product: SSM3K35FS1.6 0.80 1.Thickness: 0.7 typ.USM (SOT-323)(SC-70)Ultra-Super-MiniTypical product: SSM3K15FU2.0 1.2 51. 3Thickness: 0.9 typ.0. 350. 450. 250. 15Unit: mmUnit: mm221.2Unit: mm0.0.UFMUltra-super-Mini Flat leadTypical product: SSM3J130TU2.0 1.73Thickness: 0.7 typ.S-Mini (SOT-346)(SC-59)Super-MiniTypical product: SSM3K15F2.9 1.59Thickness: 1.1 typ.TSMThin Super-MiniTypical product: SSM3J304T 1.6 Thickness: 2.9 0.7 typ.1. 9CST4Chip-Scale Package, Transfer Molded, 4-PinTypical product: SSM4K27CT0.8 1.2Thickness: 0.38 typ.ESV (SOT-553)Extreme Super-mini, 5-pinTypical product: SSM5N15FE1.6 1.25Thickness: 0.55 typ.1.1.0.54340.0.USV (SOT-353)(SC-88A)Ultra-Super-mini, 5-pinTypical product: SSM5N15FU2.0 1.2 565 0.Thickness: 0.9 typ.UFVUltra-super-mini, Flat lead, 5-pinTypical product: SSM5H12TU1.7 2.03 1.Thickness: 0.7 typ.0.SMV (SOT-25)(SC-74A)Super-Mini, 5-pinTypical product: SSM5H14F2.9 1.695Thickness: 1.1 typ.CST6DChip-Scale Package, Transfer Molded, 6-Pin, D-TypeTypical product: SSM6N37CTD1.0 0.9Thickness: 0.38 typ.ES6 (SOT-563)Extreme Super-mini, 6-pinTypical product: SSM6N36FE1.6 1.25Thickness: 0.55 typ.0.350.2.1Unit: mm2.5Unit: mm2.8Unit: mmUnit: mm0.0.US6 (SOT-353)(SC-88A)Ultra-Super-mini, 6 pinTypical product: SSM6N15FU2.0 1.2 565 0.Thickness: 0.9 typ.0.UF6Ultra Super mini Flat lead 6-pinTypical product: SSM6J409TU2.0 1.7Thickness: 0.7 typ.TPC SeriesThe TPC Series comes in small, thin packages suitable for portable devices. The latest TSON Advance package allows the maximum permissible power dissipation equivalent to SOP-8, but occupies 64% less board space.0.2.10.Unit: mm32.120.65Unit: mm0.2.1Unit: mm32.1Unit: mm2.80.4Unit: mmUnit: mm21.60.2150.21.60.20.0.1.6Unit: mm232.1Unit: mmUnit: mmUnit: mmVS-6Very Thin & Small, 6-pinTypical product: TPC60032.9 1.695 0.Thickness: 0.75 typ.VS-8Very Thin & Small, 8-pinTypical product: TPCF81012.9 1.55Thickness: 0.8 typ.PS-8Progressive & Small 8-pin SeriesTypical product: TPCP84022.9 2.40. 65Thickness: 0.8 typ.Chip LGALand Grid ArrayTypical product: TPCL42011.5 9 1.59 φ0.3Thickness: 0.25 typ.STP2Small Thin PackageTypical product: TPCT42041.63.4Thickness: 0.65 typ.0. 62.80. 3Unit: mm0. 30.1.9Unit: mmTSON AdvanceTypical product: TPCC8005-H3.3 3.1Thickness: 0.85 typ.3.0TSSOP-8Typical product: TPCS82084.4TSSOP AdvanceTypical product: TPCM8001-H3.5 3.6 5Thickness: 0.75 typ.SOP-8Typical product: TPC8035-H5.0 4.4Thickness: 1.6 typ.SOP AdvanceTypical product: TPCA8028-H5.0 5.0Thickness: 0.95 typ.Thickness: 0.9 typ.1. 27650. 65250.3Unit: mm0. 25Unit: mmUnit: mmUnit: mm43.36.40.4.60.160.56.06.041. 270.0.80.2.8Unit: mmUnit: mm3.865330.3Unit: mmUnit: mm4-2 Application Examples and Block DiagramsCell Phone (Power Supply Circuit)Load switchesP-ch: SSM3J130TU P-ch: SSM3J409TU P-ch: SSM3J120TULoad switchesP-ch: SSM3J120TU P-ch: SSM6J51TU P-ch: SSM3J46CTBBattery charger USB chargingControl ICPower supply ICPABB-ICPower management switchesP-ch: SSM3J114TU P-ch: SSM3J115TULi-ion batteryCCD camera moduleDC-DC convertersHS: SSM5G10TU (P-ch + Schottky Barrier Diode) LS: SSM5H12TU (N-ch + Schottky Barrier Diode)Notebook PC (Power Supply Circuit)DC-DC convertersHS: TPCA8030-H LS: TPCA8036-H LS: TPCA8028-H LS: TPCA8A04-H HS: TPCA8030-H LS: TPCA8036-H LS: TPCA8028-H LS: TPCA8A04-HCPULoad switchesP-ch: TPC6111 / TPCF8104 N-ch: TPC6011 / TPCF8002 P-ch: SSM3J117T / SSM3J321T N-ch: SSM3K315T / SSM3K7002FPower management switches Adapter InputP-ch: TPC8121 / 8118 / 8123 N-ch: TPC8030 / 8028V-Core19 VVGADDR Charger HS: TPCP8005-H LS: TPCP8005-H Dual: TPC8216-H 3.3 V/5 V CMS16HS: TPC8037-H LS: TPC8037-H TPC8A03-H LDO HS: TPC8037-H LS: TPC8037-HHS: TPC8037-H LS: TPC8037-H 1.8VLDOBattery 11.5 VHS: TPC8037-H LS: TPC8037-HBattery 21.05 VHS: TPC8037-H LS: TPC8037-H174Low-VDSS MOSFETs (in Small SMD Packages)4-2 Application Examples and Block DiagramsLithium-Ion Secondary Battery Protection CircuitsCell Phones Notebook PCs(Example using P-channel MOSFETs)P+P-P-P+Control ICMicrocontrollerDual N-ch MOSFET? STP2 Series ? PS-8 (dual) ? Chip LGAMotor Driver (Power Driver Circuit)MotorsPower driver circuitControl ICSingle P-ch MOSFET x 2? SOP Advance ? SOP-8(Single N-ch MOSFET x 2)? SOP Advance ? SOP-8ControllerInterfacePre-driver Protection circuitMP/N-ch complementary MOSFET? VS Series (dual) ? PS Series (dual) ? SOP Series (dual)184-3 Low-VDSS MOSFET RoadmapsRoadmap for Trench MOSFETs■ High-Speed, Low-VDSS U-MOS30 N-ch, VDSS = 30 V 25 10 Qsw (nC) Ron*A (mOhm*mm2) 20 15 10 5U-MOSIV■ Low-Ron Trench MOSFETs30P-chU-MOSIII U-MOSVN-c hU-MOSIVU-MOSVI3UU- MO S M O IIISV H M UO SV -H M O SV I-H IIH U-U-MOSVI1 1 5 10 RDS(ON) (mΩ)0200320042005200620072008Package Options100 SOP Advance TSSOP Advance TSON AdvanceSOP-8 PS-810VS-8 UF6 VS-6 STP2 STP TSM S-Mini SMV CST3B UFV US6 TSSOP-8Drain Current (A)Chip LGAUFMES61VESM SSM USMCST4CST6DCST3ESVUSV0.1 0.1 1Footprint Area (mm2)10100194Low-VDSS MOSFETs (in Small SMD Packages)■ Ultra-Small Packages S-Mini2.5 mm 2.0 mm 2.9 mmUSM2.1 mm 1.6 mmSSM1.6 mmVESM1.2 mm 1.2 mm 1.0 mmCST30.6 mm 2.0 mmUS62.1 mm 2.0 mmUSV2.1 mm 1.6 mmESV1.6 mmCST6D0.9 mm 1.0 mm0.425 mm 0.5 mm0.4 mm0.2 mm0.425 mm0.425 mm0.2 mmFootprint Area Permissible Power Dissipation Height (MAX)7.3 mm2 0.2 W4.2 mm2 0.2 W2.6 mm2 0.1 W1.4 mm2 0.15 W0.6 mm2 0.1 W4.2 mm2 0.2 W4.2 mm2 0.2 W2.6 mm2 0.15 W0.9 mm2 0.14 W1.4 mm1.1 mm0.9 mm0.55 mm0.4 mm1.1 mm1.1 mm0.6 mm0.4 mm■ Thermally-Enhanced Compact Packages TSM2.8 mm 2.9 mm 2.0 mmUF62.1 mm 2.9 mmSMV2.8 mm 2.0 mmUFV2.1 mmUFM2.1 mm 2.0 mm 1.6 mmES61.6 mmCST3B0.8 mm 1.2 mmCST40.8 mm 1.2 mm0.6 mm0.2 mm0.6 mm0.2 mm0.2 mm0.2 mmFootprint Area Permissible Power Dissipation(Note)8.1 mm24.2 mm28.1 mm24.2 mm24.2 mm22.6 mm21.0 mm21.0 mm20.7 W0.5 W0.75 W0.5 W0.5 W0.5 W0.4 W0.4 WHeight (MAX)0.85 mm0.75 mm1.4 mm0.75 mm0.75 mm0.6 mm0.5 mm0.4 mmNote: Mounted on FR4 Boad (24.5 x 24.5 mm)■ Thermally Enhanced Packages SOP Adv.6 mm■ Compact Packages TSSOP Adv. TSON Adv.4.65 mm 3.3 mm 6 mmSOP-8VS-82.9 mm 2.8 mm 1.9 mmVS-62.9 mm 2.8 mmPS82.9 mm 1.59 mm 0.65 mmLGA1.59 mm5 mm5 mm3.5 mm3.3 mm0.65 mm0.95 mmFootprint Area Permissible Power Dissipation Height30 mm2 2.8 W (+47%) 1.0 mm (C47%)30 mm2 1.9 W 1.9 mm16.3 mm2 (?46%) 2.3 W (+21%) 0.8 mm (C58%)10.9 mm2 (?64%) 1.9 W 0.9 mm (C53%)Footprint Area Permissible Power Dissipation Height5.5 mm2 (C32%) 2.5 W (+14%) 0.85 mm8.1 mm2 2.2 W 0.85 mm8.1 mm2 1.68 W (C24%) 0.85 mm2.56 mm2 ― 0.25 mm(Percentage relative to SOP-8)(Percentage relative to VS-6)204-4 Low-VDSS, High-Speed MOSFETsSynchronous Rectification DC-DC Converters C Block Diagram, Timing Chart and Power Loss Factors■ Block DiagramControl IC-side (switch and high-side) MOSFETs Vin D S G D Vcc Control IC Load G S C Synchronous-side (low-side) MOSFET L Vout■ Timing ChartT ton(High)VGS(High)ton(Low)VGS(Low) High-side MOSFET: Turn-off loss VDS(High) High-side MOSFET: Conducting loss High-side MOSFET: Turn-on loss IDS(High)IDS(Low) Low-side MOSFET: Self-turn-on loss ISBD(SBD) VDS (Low+SBD) Dead time: Diode loss Low-side MOSFET: Conducting lossDead time 1 Dead time 2Synchronous Rectification DC-DC Converters C Summary Results of Power Loss Simulation and Key Parameters for MOSFETs8.00Key Parameters to Improve Efficiency7.00 Conditions ? Input Voltage: 19 V ? Output Voltage: 1.5 V ? Frequency: 1 MHzEfficiency 82.49%Others (drive loss, etc.)Synchronous-side MOSFET Very low RDS (ON) Reduction of the self-turn-on lossesSynchronous-side (low-side) MOSFET6.00 Power Dissipation (W)5.00Conducting lossLow Qrr Low Cgd, Cgd/Cgs Low rg Optimized Vth Shoot-through current control Low Qg Switch-side MOSFET High-speed switching Low Qsw Low rg Low RDS (ON)4.00Dead time loss (off)3.00Efficiency 85.13% Efficiency 83.20%Self-turn-on loss Dead time loss (on) Turn-on loss Conducting loss Turn-on loss2.001.000.00 5 10 Output Current (A) 2021Switch-side (high-side) MOSFET4Low-VDSS MOSFETs (in Small SMD Packages)Synchronous Rectification DC-DC Converters C Efficiency Improvement by Thermally Enhanced Package and New Process Technology ■ Thermally Enhanced PackageToshiba has developed the SOP Advance package with the same footprint area as the standard SOP-8 package. With an external heatsink on the bottom, the SOP Advance package offers enhanced thermal characteristics, realizing a high power dissipation and thus high-current capability. Unit: mmSOP-8SOP Advance6.06.01.9 Max5.05.0Footprint Area Total height (max) Rth(ch-a) (t = 10 s) (Note 1) Current rating Package resistance (Note 2)(mm2) (mm) (?C / W) (A) (mΩ)SOP-8 30 1.9 65.8 18 1.6SOP Advance 30 1.0 44.6 40 0.51.0 MaxFeatures of the SOP Advance Same footprint area as the SOP-8 Low profile, Thinner by 0.9 mm High power dissipation High current-carrying capacity Low package resistanceNote 1: When mounted on a glass-epoxy board (25.4 mm x 25.4 mm x 0.8 mm)Note 2: Without chip resistance■ New Process TechnologyToshiba has developed a new process technology to further reduce an internal gate resistance (rg) and gate capacitance ratio (Cgd/Cgs) for minimizing the self-turn-on loss while maintaining both the low ON-resistance and low gate charge characteristics.RDS(ON) Typ. @4.5 V (mΩ) 2.3 3.1 4.8 rg Typ. (Ω) 1.0 1.0 2.4 Cgd/Cgs Typ. (%) 6.8 6.6 12.7TPCA8028-H (New generation) TPCA8019-H (One gen. ago) TPCA8004-H (Two gen. ago)Efficiency Characteristicsf = 300 kHz, VIN = 19.5 V, VOUT = 1.1 V90Two low-side MOSFETs90 88 86 84 82 80 78New device Conventional deviceOne low-side MOSFET88 86 84 82 80 78 76 74 0 5 10 15 20 25High-side MOSFET Low-side MOSFETEfficiency (%)Efficiency (%)High-side MOSFETLow-side MOSFETNew device Conventional deviceTPCA8030-H (1p) + TPCA8028-H (2p) TPCA8030-H (1p) + TPCA8036-H (2p) TPCA8023-H (1p) + TPCA8019-H (2p)TPCA8030-H (1p) + TPCA8028-H (1p)76 74 0TPCA8030-H (1p) + TPCA8036-H (1p) TPCA8023-H (1p) + TPCA8019-H (1p)510152025Output Current (A)Output Current (A)22Synchronous Rectification DC-DC Converters C MOSBD (MOSFET with SBD) ■ External SBD● Low-side MOSFET turned on ● Dead time ● High-side MOSFET turned onLS LALS LALarge lrr CurrentCurrentCurrentWhen an SBD is added externally, the SBD can’t function fully due to the influence of wire inductances (Ls and LA); thus a body diode current during the dead time becomes larger and causes the following penalties.1: Increase in the conducting loss of the body diode. 2: Increase in the reverse recovery loss due to high di/dt. 3: Induces a self-turn-on phenomenon.■ MOSFET with SBD (MOSBD)A MOSFET with SBD using a monolithic structure reduces a wire inductance (LA) and a parasitic inductance (LS). This structure makes it possible for the SBD to function fully and to reduce losses.● Current Waveform Simulation20 MOSFET channel current 10 Body diode current 10 SBD current 0.0 SBD current Body diode current -10 -10 0.0Using External SBD20MOSFET with SBD (MOSBD)MOSFET channel current-20 691.01μ691.04μ time (s)691.07μ691.10μ-20 691.01μ691.04μ time (s)691.07μ691.10μLS = LA = 0.5 nHLS = LA = 0.01 nHEfficiency Characteristicsf = 300 kHz, VIN = 19.5 V, VOUT = 1.1 V90 88 86 84 82 80High-side MOSFET Low-side MOSFETTwo low-side MOSFETs90 88 86 84 82 80 78One low-side MOSFETEfficiency (%)78 76 74 0TPCA8030-H (1p) + TPCA8A04-H (2p) MOSBD (For heavy-loadapplications) TPCA8030-H (1p) + TPCA8A02-H (2p) MOSBD (For light-load applications)Efficiency (%)High-side MOSFETLow-side MOSFET Standard76 74TPCA8030-H (1p) + TPCA8A04-H (1p) MOSBD TPCA8030-H (1p) + TPCA8019-H (1p) MOSFETTPCA8030-H (1p) + TPCA8019-H (2p) Standard MOSFET 5 10 15 20 250510152025Output Current (A)Output Current (A)234Low-VDSS MOSFETs (in Small SMD Packages)High-Speed MOSFET OfferingsAbsolute Maximum Ratings Part Number VDSS (V) 20 30 C30 VGSS (V) ±12 ID (A) 40 5 C5 6.4 11 22 13 22 24 26 21 24 30 11 11 12 12 30 15 17 17 18 18 18 ±20 21 24 24 30 34 38 40 45 45 50 3.9 7.5 (12) (16) (18) (18) 40 7.5 (20) 30 30 (32) 35 (38) (46) SOP Advance SOP-8 VS-6 SOP Advance N-ch Single SOP-8 TSSOP Advance TSON Advance N-ch Single P-ch Single N-ch Dual VS-6 SOP-8 PS-8 Circuit Configuration RDS(ON) Max (mΩ) Package SOP Advance 4.5 V 3.5 79 83 23.0 15.7 10.2 19.3 10.2 8.6 7.3 15.7 13.4 8.2 25 16.1 13.9 13.9 8.6 7.2 6.9 4.5 5.1 3.6 15.7 13.4 13.4 8.2 6.6 4.8 6.8 3.9 4.1 3.2 100 35 (14.0) (8.8) (6.6) (4.4) 35 (13.7) 14 ― (8.5) 7.9 (6.3) (4.1) 10 V 7.5* 54 59 20 12.9 6.9 16.9 6.9 6.9 6.0 12.9 11 6.2 17 13.3 11.4 11.4 6.5 5.3 6.0 3.5 4.5 3.2 12.9 11.0 11.0 6.2 5.7 4.2 4.9 3.4 3.1 2.8 75 27 (12.1) (7.6) (5.7) (3.9) 27 (11.8) 9 10 (7.3) 5.4 (5.4) (3.6) Qsw Typ.(nC) @VDS = VDSS x 0.8 16 1.8 4.8 3.4 5.0 7.1 4.2 7.1 7.4 9.1 5.0 5 9.3 3.6 5.0 5 5 8.4 9.6 8.5 16 13 17 5.0 5 5 9.3 8.6 13 11.0 17 15.5 20 1.3 3.5 TBD (13) (15) (23) 3.5 TBD 7.4 8.1 (13) 13 (15) (23) Series U-MOSIII-H U-MOSIII-H U-MOSIII-H U-MOSVI-H U-MOSV-H U-MOSV-H U-MOSIV-H U-MOSV-H U-MOSIV-H U-MOSIV-H U-MOSV-H U-MOSV-H U-MOSV-H U-MOSIII-H U-MOSV-H U-MOSV-H U-MOSV-H U-MOSV-H U-MOSV-H U-MOSVI-H U-MOSV-H U-MOSVI-H U-MOSVI-H U-MOSV-H U-MOSV-H U-MOSV-H U-MOSV-H U-MOSVI-H U-MOSVI-H U-MOSV-H U-MOSIV-H U-MOSV-H U-MOSVI-H U-MOSIII-H U-MOSIII-H U-MOSIV-H U-MOSIV-H U-MOSIV-H U-MOSIV-H U-MOSIII-H U-MOSIV-H U-MOSIII-H U-MOSIII-H U-MOSIV-H U-MOSIII-H U-MOSIV-H U-MOSIV-H?: Under developmentTPCA8011-H TPC6007-H TPC6109-H TPC8216-H TPCP8005-H ? TPCC8001-H ? TPCC8003-H ? TPCC8002-H ? TPCC8006-H ? TPCC8005-H ? TPCM8003-H TPCM8004-H TPCM8002-H TPC8021-H TPC8031-H TPC8037-H TPC8038-H ?? TPC8032-H TPC8033-H TPC8039-H TPC8034-H TPC8036-H TPC8035-H TPCA8023-H TPCA8030-H TPCA8031-H ?? TPCA8018-H TPCA8039-H TPCA8036-H TPCA8012-H TPCA8060-H ? TPCA8019-H TPCA8028-H TPC6006-H TPC8022-H TPC8052-H ? TPC8047-H ? TPC8046-H ? TPC8045-H ? TPCA8020-H TPCA8052-H ? TPCA8014-H TPCA8027-H TPCA8047-H ? TPCA8015-H TPCA8046-H ? TPCA8045-H ?*: VGS = 2.5 V ??: rg = 3.4 Ω (Typ.)24Absolute Maximum Ratings Part Number VDSS (V) VGSS (V) ID (A) 5 (9) (11) (13) 60 (16) (15) (24) 25 (28) (35) (13) 80 (28) 2.2 100 2.2 22 150 200 250 ±20 2.1 7 1.9 5.5 1.7 4 8 21 20 10 30 17 18 20 34 38 42 C4.8 C40 40 C40 C7.5 C7.5 6.5 C6.5Circuit Configuration N-ch DualRDS(ON) Max (mΩ) Package 4.5 V 56 (24.8) SOP-8 (15.6) (11.5) (7.4) (24.5) (15.3) SOP Advance 26 (11.2) (7.1) SOP-8 SOP Advance PS-8 (10.1) (9.8) 190 190 ― ― ― ― ― ― ― 21.9 12.0 17.2 17.6 7.0 4.5 17.2 SOP Advance 6.7 5.1 4.1 PS-8 54 37 37 35 37 SOP-8 SOP Advance 10 V 50 (23.2) (14.5) (10.7) (6.9) (22.9) (14.2) 21 (10.4) (6.6) (9.7) (9.4) 180 180 26 350 350 450 450 580 580 17.5 8.3 12.9 13.3 5.0 3.6 12.9 5.3 3.9 3.2 40 30 30 27 30Qsw Typ.(nC) @VDS = VDSS x 0.8 2.9 (6.6) (10) (13) (19) (6.6) (10) 6.6 (13) (19) (18) (18) 2.0 2.0 14 3.3 3.7 3.3 3.7 3.3 3.7 3.7 4.1 3.7 3.7 8.4 13.4 3.7 8.6 11 13.4 6.5 9.7 9.7 3.5 9.7Series U-MOSIII-H U-MOSIV-H U-MOSIV-H U-MOSIV-H U-MOSIV-H U-MOSIV-H U-MOSIV-H U-MOSIII-H U-MOSIV-H U-MOSIV-H U-MOSIV-H U-MOSIV-H U-MOSIII-H U-MOSIII-H U-MOSIII-H π-MOSV π-MOSV π-MOSV π-MOSV π-MOSV π-MOSV U-MOSV-H U-MOSV-H U-MOSV-H U-MOSV-H U-MOSV-H U-MOSV-H U-MOSV-H U-MOSV-H U-MOSV-H U-MOSV-H U-MOSIII-H U-MOSIII-H U-MOSIII-H U-MOSIII-H U-MOSIII-HTPC8213-H TPC8053-H ? TPC8050-H ? TPC8049-H ? TPC8048-H ? TPCA8053-H ? TPCA8050-H ? TPCA8016-H TPCA8049-H ? TPCA8048-H ? TPC8051-H ? TPCA8051-H ? TPCP8003-H TPC8214-H TPCA8022-H TPCS8009-H TPCA8009-H TPCS8007-H TPCA8010-H TPCS8008-H TPCA8008-H TPCP8A05-H ? TPCC8A01-H ? TPCM8A05-H TPC8A05-H TPC8A03-H TPC8A04-H TPCA8A05-H TPCA8A02-H TPCA8A08-H ? TPCA8A04-H TPCP8103-H TPC8116-H TPCA8107-H TPC8406-H*: VGS = 2.5 V ??: rg = 3.4 Ω (Typ.)N-ch SingleN-ch DualSOP-8 SOP Advance TSSOP-8 SOP AdvanceN-ch SingleTSSOP-8 SOP Advance TSSOP-8 SOP Advance PS-8 TSON Advance TSSOP Advance SOP-8MOSBDP-ch SingleN-ch/P-ch DualSOP-8?: Under development254Low-VDSS MOSFETs (in Small SMD Packages)4-5 Low-VDSS, Low-RDS(ON) MOSFETs (for Lithium-Ion Battery Protection)Lithium-Ion Battery Protection Circuit TrendLithium-Ion Secondary Battery ProtectionTSSOP-8 (6.4 mm x 3.3 mm x 0.9 mm)PCM Control IC20034.03.5 mmLiBSTP (3.8 mm x 2.0 mm x 0.6 mm)20043.03.5 mmSTP2 (3.8 mm x 1.6 mm x 0.6 mm)20063.0 mmMOSFET Roadmap05
TSSOP Advance SOP Advance For Laptop PCs SOP-8 TSON Advance P-chU-MOSIV N-chU-MOSV U-MOSIVU-MOSVI U-MOSVIFor Cell Phones, Digital Cameras and PVCPS-8 STP TSSOP-8 Chip LGA MOSFET + Control IC STP2N-chU-MOSIVU-MOSVU-MOSVI26Low-ON-resistance N-Channel Power MOSFETsAbsolute Maximum Ratings Part NumberTPCT4203 ? TPCT4204 ? TPCL4201 ? TPCL4203 ? TPCL4202 ? TPCP8202 TPCP8006 ? TPCP8004 ? TPCC8007 ? TPCC8008? TPC8014 TPC8025 ? TPC8030 ? TPC8041 ? TPC8026 ? TPC8028 ? TPC8029 ? TPC8042 ? TPC8027 ? TPC8208 TPC8207 TPC8211 TPC8210 TPCA8024 ? TPCA8025 ? TPCA8042 ? TPCA8026 ?VDSS (V)20 30 20 24 30 30 20 30 20 30 30 30 30 30 30 30 30 30 30 20 20 30 30 30 30 30 30VGSS±12 ±12 ±12 ±12 ±12 ±12 ±12 ±20 ±12 ±25 ±20 ±20 ±25 ±20 ±20 ±20 ±20 ±20 ±20 ±12 ±12 ±20 ±20 ±20 ±20 ±20 ±20ID (A)6 6 6 6 6 5.5 9.1 8.3 (27) (24) 11 11 11 13 13 18 18 18 18 5 6 5.5 8 35 40 45 45Circuit ConfigurationRDS(ON) Max (mΩ) Package 2.5 V49 52 52 55 64 39 13.7 ― TBD ― ― ― ― ― ― ― SOP-8 ― ― ― 70 30 ― ― ― ― ― ―4V32 39 31* 36* 40* 24 10* 14* (5.5*) TBD 22* 14.5* 17* 13.5* 10* 8* 7* 6.5* 5.5* 50 20 44* 20* 7.8* 6.0* 5.7* 4.5*10 V― ― ― ― ― ― ― 8.5 ― (7) 14 9 9 7 6.6 4.3 3.8 3.4 2.7 ― ― 36 15 4.3 3.5 3.3 2.2Mass ProductionY Y 9/4 2009/4 Y Y Y 9/5 Y Y Y Y Y Y Y Y Y Y Y Y Y Y Y Y YSTP2 N-ch DualChip LGAPS-8TSON AdvanceN-ch SingleN-ch DualN-ch SingleSOP Advance*: VGS = 4.5 V ?: No protection Zener diode between gate and sourceLow-ON-resistance P-Channel Power MOSFETsAbsolute Maximum Ratings Part NumberTPCC8102 ? TPCC8103 ? TPC8115 TPC8109 TPC8119 ? TPC8121 ? TPC8111 TPC8113 TPC8123 ? TPC8122 ? TPC8107 TPC8118 ? TPC8112 TPC8114 TPC8117 ? TPC8120 ? TPC8405 TPCM8102 ? TPCA8105 TPCA8102 TPCA8103 TPCA8106 ?VDSS (V)C30 C30 C20 C30 C30 C30 C30 C30 C30 C30 C30 C30 C30 C30 C30 C30 30 C30 C30 C12 C30 C30 C30VGSS±20 ±20 ±8 ±20 ±20 ±20 ±20 ±20 C25/+20 ±20 ±20 ±20 ±20 ±20 ±20 C25/+20 ±20 ±20 ±20 ±8 ±20 ±20 ±20ID (A)(C15) (C18) C10 C10 C10 C11 C11 C11 C11 C12 C13 C13 C13 C18 C18 C18 6 C4.5 C25 C6 C40 C40 C40Circuit ConfigurationRDS(ON) Max (mΩ) Package 2.5 VTSON Advance ― ― 14 ― ― ― ― ― ― SOP-8 ― ― ― ― ― ― ― ― ― TSSOP Advance ― 51 ― ― ―4V(34) (24) 10* 30 28 24 18 18 12.5* 16.5 15 15 14 6.8 7.9 4.2* 33* 42* 16 33 14 6.8 7.810 V(18.5) (13) ― 20 13 12 12 10 9 8 7 7 6 4.5 3.9 3.2 26 33 7.7 ― 6 4.2 3.7Mass ProductionY 2009/5 Y Y Y Y Y Y Y Y Y Y Y Y Y 2009/6 Y Y Y Y Y YP-ch SingleN-ch/P-ch DualP-ch SingleSOP Advance*: VGS = 4.5 V ?: No protection Zener diode between gate and source274Low-VDSS MOSFETs (in Small SMD Packages)4-6 Semi-Power MOSFET OfferingsSemi-Power P-Channel Single MOSFETsPackage Part Number VDSS (V) VGSS (V) ID (A) RDS(ON) Max (mΩ) VGS = l 1.5 V l VGS = l 1.8 V l VGS = l 2.5 V l VGS = l 4.0 V l Ciss (pF) Series *Internal ConnectionsUnit: mmLand Pattern ExampleCST3B1.2SSM3J46CTB0.8 0.48C20±8C2.0250178133103 (@4.5 V)290U-MOSVIG D S TOP VIEWCSSM6J53FEC20 C20 C20 C20 C12 C20 C30 C20 C20 C20 C20 C12 C20 C20 C20 C20 C20 C30 C30 C30 C20 C12 C20 C12 C30 C30 C20 C20 C30 C20 C20 C12 C12 C20 C20 C20 C30 C30 C30 C30 C30 C30±8 ±8 ±8 ±8 ±8 ±12 ±20 ±8 ±8 ±8 ±8 ±8 ±8 ±8 ±8 ±12 ±12 ±20 ±20 ±20 ±8 ±8 ±10 ±12 ±20 ±20 ±12 ±12 ±20 ±8 ±8 ±8 ±8 ±8 ±8 ±8 ±10 ±10 ±20 ±20 ±20 ±20C1.8 C2.0 C0.8 C0.5 C1.2 C0.5 C1.4 C4.4 C4.0 C4.6 C2.2 C2.3 C2.0 C1.8 C1.8 C1.7 C1.0 C2.0 C1.4 C1.1 C6.7 C4.0 C2.5 C3.0 C2.5 C2.0 C1.3 C0.65 C0.8 C5.0 C5.2 C3.0 C2.7 C2.3 C3.6 C1.6 C1.7 C1.5 C3.5 C2.7 C2.4 C1.7364204 320 460 980136 186 306 330 210 430―130 234 230 160 260 491 38 46(@4.5V) 98 94 130 149 158 169 480 225 480 790568 335 250 250 420 218 137
550 335 331 250 370 160 280 137 86 0 730 280 370 160 130
550 335 390 170 240 150 505 413 280 137U-MOSIV U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSII U-MOSVI U-MOSIV U-MOSV U-MOSIV U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSII U-MOSII U-MOSII U-MOSV U-MOSIV U-MOSIV U-MOSIII U-MOSIII U-MOSIII U-MOSII π-MOSVI π-MOSVI U-MOSV U-MOSV U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII π-MOSVI π-MOSVI U-MOSIII-H U-MOSII U-MOSII U-MOSII2.4 0.8 1.0 0.95 0.95 0.65 0.8 1.9 0.65 0.45 1.9 0.5 0.8 0.65 0.65 1.35 0.3 1.0 0.5 0.5 0.45ES6 (SOT-563)1.6SSM6J206FE SSM6J205FE SSM6J26FE SSM6J23FE SSM6J25FE SSM6J207FE SSM3J130TU SSM3J120TU SSM3J129TU SSM3J115TU SSM3J110TU SSM3J109TU SSM3J114TU SSM3J108TU― ― ― ― ― ―63.2 140 140 353― ― ―41.1 78 88 193 240 300 321 3631.60.55―31 49 62 125 145 172 199 230 249 68025.8(@4.5V) 1800UFM2.1― ―526U-MOSIV― ― ― ― ― ―72.3 1502.00.7SSM3J113TU SSM3J111TU SSM3J117TU SSM3J118TU SSM3J112TU SSM6J409TU SSM6J51TU SSM6J50TU SSM6J21TU SSM6J401TU SSM6J402TU― ― ― ― ―46.3 85 205 (@2.0V)― ― ―30.2 54 100 88UF62.122.1(@4.5V) 1100―64 (@4.5V) 50 145 225 180 500 800 31(@4.5V) 46(@4.5V) 70 91 127 107(@4.5V) 268 400 500 100 170 225 477― ― ― ― ― ― ―83 137― ― ―460 (@2.0V)2.00.7― ―260 700US6(SOT-363)2.1SSM6J08FU SSM6J06FU― ―56 88 180 (@2.0V) 237 297 306 6402.00.9SSM6J07FU SSM3J307T SSM3J321T SSM3J13T SSM3J312T SSM3J304T SSM3J317T SSM3J313T SSM3J01T SSM3J02T SSM3J314T SSM3J14T SSM3J306T SSM3J305T―40 62 95 142 169 144 396 600 700― ― ― ― ― ― ― ― ― ― ―TSM2.8― ― ― ― ― ―2.90.7― ― ― ―* The internal connection diagrams only show the general configurations of the circuits.28Semi-Power N-Channel Single MOSFETsPackage Part Number VDSS (V) VGSS (V) ID (A) RDS(ON) Max (mΩ) VGS = l 1.5 V l VGS = l 1.8 V l VGS = l 2.5 V l VGS = l 4.0 V l Ciss (pF) Series *Internal ConnectionsD D 0.3Unit: mmLand Pattern Example0.5 0.75 0.2 0.3 1.0 0.5 0.5 0.5 1.0 0.65 1.9 0.65 0.45 0.8 0.65 0.65 0.8 1.0 2.4 0.95 0.95 1.9 0.45CST41.2SSM4K27CT0.8 0.3820±120.5―390260205174U-MOSIIIGSTOP VIEWSSM6K211FE SSM6K203FE SSM6K202FE SSM6K204FE SSM6K208FE1.620 20 30 20 30 20 30 20 30 20 20 20 20 20 30 20 20 20 30 30 30 30 30 30 20 20 20 20 20 20 30 30 60 60 20 20 30 20 20 20 30 30 30 30 30 30 30 30 30 60±10 ±10 ±12 ±10 ±12 ±12 ±12 ±12 ±20 ±20 ±20 ±10 ±10 ±12 ±12 ±12 ±10 ±12 ±12 ±12 ±20 ±20 ±20 ±20 ±20 ±20 ±10 ±10 ±10 ±12 ±20 ±20 ±20 ±20 ±12 ±12 ±20 ±10 ±12 ±12 ±12 ±12 ±10 ±10 ±20 ±20 ±20 ±20 ±20 ±203.2 2.8 2.3 2.0 1.9 0.5 0.5 1.4 1.4 1.2 1.2 4.2 3.2 3.0 2.5 2.6 2.0 2.2 2.0 2.2 5.4 2.4 2.1 1.5 1.5 1.2 4.2 3.0 2.0 4.0 4.4 3.0 2.0 2.0 1.6 1.1 1.5 5.0 4.7 3.5 4.0 3.0 3.2 2.5 6.0 4.0 4.2 2.9 3.0 2.5118 15382 106 145 214 296 39559 76 101 164 177 190 180 23047(@4.5 V) 61 85 126 133 145 145 170 371 420 540 28 48 56 74 71 123 103 123 100 41.5(@4.5 V) 120 200 360 410 530 28 55 126 40 38.5 (@4.5 V) 77 (@4.5 V) 440 440 105 160 220 28 31 56 65(@4.5 V) 71 120 200 41.5(@4.5 V) 67 77(@4.5 V) 120 175 145510 400 270 195 123 268 245 125 57 60 36
270 268 195 125 123 245 450 180 102 57 60 36
150 140 306 125 102 0 270 270 152 115 450 460 190 180 120 235U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII1.35ES6 (SOT-563)―307― ― ― ― ― ― ―66 140SSM6K25FE1.6 0.55SSM6K24FE SSM6K22FE SSM6K210FE SSM6K30FE SSM6K31FE SSM3K123TU SSM3K121TU SSM3K104TU SSM3K119TU SSM3K102TU― ― ― ― ―43 93 110 134 154 211 230 286― ― ―32 63 74 90 99 161 138 167 135π-MOSVII π-MOSVIIU-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIV― ― ―304UFM2.1SSM3K122TU SSM3K101TU SSM3K127TU SSM3K116TU― ― ― ― ― ― ― ― ―66 147 307― ― ― ― ― ― ―43 100 2142.00.7SSM3K131TU SSM3K124TU SSM3K105TU SSM3K128TU SSM3K107TU SSM3K106TU SSM6K403TU SSM6K404TU― ― ― ― ― ―32 70 164 54π-MOSVII π-MOSVIU-MOSIIIπ-MOSVII π-MOSVIIU-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIV U-MOSIIIUF62.1SSM6K405TU SSM6K18TU SSM6K406TU SSM6K34TU SSM6K407TU SSM6K32TU― ― ― ― ― ― ― ―66― ― ― ― ―210 (@2.0 V)― ― ― ―140 2102.00.7π-MOSV π-MOSVU-MOSIIUS6(SOT-363)2.1SSM6K08FU SSM6K06FU SSM6K07FU SSM3K310T SSM3K309T SSM3K301T SSM3K316T SSM3K302T SSM3K01T SSM3K02T SSM3K315T SSM3K14T SSM3K320T SSM3K303T SSM3K12T SSM3K318T― ―43 47 110 131 131π-MOSVI π-MOSVIU-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII2.00.9―32 35 74 87 87 150 250― ― ― ― ― ― ― ― ― ― ― ―TSM― ― ― ― ― ― ― ―π-MOSVI π-MOSVIU-MOSIV U-MOSII U-MOSIV2.8― ― ― ― ― ―2.90.7π-MOSVII π-MOSVIIU-MOSIV* The internal connection diagrams only show the general configurations of the circuits.294PackageLow-VDSS MOSFETs (in Small SMD Packages)Unit: mmSemi-Power Dual MOSFETsPolarity Part Number VDSS (V) VGSS (V) ID (A) RDS(ON) Max (mΩ) Ciss VGS = VGS = VGS = VGS = (pF) l 1.5 V l l 1.8 V l l 2.5 V l l 4.0 V l Series *Internal ConnectionsLand Pattern Example0.3 0.45 0.65 1.9 0.65ES6 (SOT-563)1.6Q1Q21.60.55SSM6N39TU SSM6N29TU N-ch x 2 SSM6N25TU SSM6N24TU SSM6N40TU SSM6P54TU SSM6P39TU P-ch x 2 SSM6P28TU SSM6P26TU SSM6P25TU SSM6P40TU SSM6L39TU20 20 20 30 30 C20 C20 C20 C20 C20 C30 20 C20 20 C20 20 C20 20 C20 30 C20 30 C30 C20 20 C20 20 C12±10 ±12 ±12 ±12 ±20 ±8 ±8 ±8 ±8 ±12 ±20 ±10 ±8 ±12 ±8 ±12 ±8 ±12 ±12 ±12 ±12 ±20 ±20 ±8 ±10 ±8 ±10 ±12 101.6 0.8 0.5 0.5 1.6 C1.2 C1.5 C0.8 C0.5 C0.5 C1.4 1.6 C1.6 0.8 C0.8 0.5 C0.5 0.5 C0.5 0.5 C0.5 1.6 C1.4 C1.8 0.1 C1.8 0.1 C1.0 0.05247190 235 395139 178 190 180119 143 145 145 182260 268 268 245 180 331 250 250 250 218 120 260 250 268 250 268 250 268 218 245 218 180 120 568 9.3 335 9.3 310 11U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIV U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIV π-MOSVI U-MOSIII π-MOSVI U-MOSIIIQ1 Q2 Q1― ― ― ―555Q1― ―350 430 460 980Q2―228 294 306 330 430―213 234 230 260 403 119 213 143 234 145 230 145 260 145 260 182 403― ― ― ― ―247Q1Q2― ―190 430 235 460 395 980 395―139 294 178 306 190 330 190 430 180 430UF6SSM6L13TU2.1― ― ― ― ― ― ― ― ― ― ―364 15 Ω1.35 0.8P-ch x 2SSM6P41FEC20±8C0.721040670440300 (@4.5 V)110U-MOSV1.0 0.5 0.50.452.00.7SSM6L10TU N-ch + P-ch SSM6L11TU SSM6L12TU SSM6L40TU SSM6E02TU SSM6E03TUQ10.65Q20.65― ― ― ― ―204― ―136 4Ω 180 4Ω 240 10 Ω―3Ω 144 3Ω 160―335―15 ΩN-ch + P-ch (Load Switch)― ― ―― ―SSM6E01TU 20―π-MOSVIQ2* The internal connection diagrams only show the general configurations of the circuits.MOSFET with a Schottky Barrier DiodePackage Polarity Part Number VDSS VGSS (V) (V)SSM5G09TU SSM5G02TU P-ch+ SSM5G10TU SBD SSM5G04TU SSM5G11TU SSM5G01TU2.1Unit: mmC12 C12 C20 C12 C30 C30 20 30 20 20 12 30 30 20±8 ±12 ±8 ±12 ±20 ±20 ±10 ±12 ±12 ±12 ±12 ±20 ±20 ±20MOSFET RDS(ON) Max (mΩ) ID Ciss (A) VGS = VGS = VGS = VGS = (pF) l 1.5 V l l 1.8 V l l 2.5 V l l 4.0 V l 200 130 550 ― C1.5 ―C1.0 C1.5 C1.0 C1.4 C1.0 1.6 1.9 1.5 1.5 1.4 1.6 1.4 1.2SeriesU-MOSII U-MOSII U-MOSIII U-MOSII U-MOSII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIIVR (V)12 12 20 12 20 20 30 12 20 12 30 20 12SBD VF Max (V) IO @IF (A) (A) 0.5 0.43 0.50.5 0.7 0.5 0.7 0.5 0.7 0.7 0.5 0.5 0.5 0.7 0.5 0.5 0.43 0.39 0.43 0.41 0.45 0.39 0.41 0.43 0.45 0.43 0.41 0.45 0.43 0.5 0.5 0.5 0.5 0.3 0.5 0.5 0.5 0.3 0.5 0.5 0.3 0.5*Internal ConnectionsLand Pattern Example― ― ― ― ―247―430240 294 420160 213 240 403 800 119 133 160 160 300 182 450 540310 250 170 86 260 123 125 125 125 180 106 36― ― ―190 296UFV― ―139 177 220 220120 U-MOSIII-H 300.45 0.8SSM5H10TU SSM5H12TU2.0 0.7― ― ― ― ― ― ―N-ch+ SBDSSM5H05TU SSM5H08TU SSM5H03TU SSM5H11TU SSM5H01TU SSM5H07TU― ― ― ― ― ―― ― ― ―π-MOSVII* The internal connection diagrams only show the general configurations of the circuits.301.9MOSFET with a Schottky Barrier DiodeMOSFET Package Polarity Part Number VDSS VGSS (V) (V) RDS(ON) Max (mΩ) Ciss ID (A) VGS = VGS = VGS = VGS = (pF) l 1.5 V l l 1.8 V l l 2.5 V l l 4.0 V l Series VR (V) SBD VF Max (V) IO @IF (A) (A) *Internal ConnectionsUnit: mmLand Pattern ExampleSMV2.80.95 0.952.91.11.0SBDSSM5H14F30±123.0―1389478270U-MOSIII450.10.60.10.8 0.6 0.8* The internal connection diagrams only show the general configurations of the circuits.VS-6 Series … [Part Number: TPC6xxx]■ Features? Zener diode between gate and source for all products ? Thin package, with a board mounting height as low as 0.85 mm (max)■ Product OfferingsPart Number TPC6004 TPC6011 ? TPC6005 TPC6007-H TPC6006-H TPC6103 TPC6105 TPC6107 TPC6111 TPC6108 TPC6109-H Absolute Maximum Ratings Circuit VGSS ID (A) Configuration VDSS (V) ±12 20 6 ±20 6 30 N-ch ±12 30 6 Single ±20 30 5 ±20 40 3.9 ±8 C12 C5.5 ±8 C20 C2.7 P-ch ±12 C20 C4.5 Single ±8 C20 C5.5 ±20 C30 C4.5 ±20 C30 C5 10 V ― 21 ― 54 75 ― ― ― ― 60 59 RDS(ON) Max (mΩ) 4.5 V 2.5 V 2.0 V 37 24 32 ― ― 32 41 35 28 ― ― 79 ― ― 100 ― 55 35 160 ― 110 100 180 55 57 ― 40 ― ― 100 ― ― 83 1.8 V ― ― ― ― ― 90 300 ― 80 ― ― Qg Typ. (nC) 17 14 19 2.8 2.4 20 6 9.8 10 13 7.2 Ciss Typ. (pF) 0 240 251
700 570 471 Marking S2C S2L S2E S2G S2F S3C S3E S3G S3L S3H S3J Series U-MOSIII U-MOSIV U-MOSIII U-MOSIII-H U-MOSIII-H U-MOSIII U-MOSIII U-MOSIV U-MOSV U-MOSIV U-MOSIII-H?: No protection Zener diode between gate and sourceVS-8 Series … [Part Number: TPC8Fxxx]■ Features? Ultra-low ON-resistance achieved by employing the U-MOS process ? Thin package, with a board mounting height as low as 0.85 mm (max) ? 32% reduction in mounting area compared with the VS-6 (TSOP-6) Series, due to the use of a high-density flat package ? PD = 2.5 W @ t = 5 s when the device is mounted on a glass epoxy board■ Product OfferingsPart Number TPCF8002 ? TPCF8101 TPCF8103 TPCF8102 TPCF8104 TPCF8201 TPCF8301 TPCF8302 TPCF8303 TPCF8304 TPCF8402 TPCF8A01 TPCF8B01 Absolute Maximum Ratings VDSS (V) VGSS ID (A) ±20 30 6 ±8 C12 C6 ±8 C20 C2.7 ±8 C20 C6 ±20 C30 C6 ±12 20 3 ±8 C20 C2.7 ±10 C20 C3 ±8 C20 C3 ±20 C30 C3.2 ±20 30 4 ±20 C30 C3.2 20 3.0 ±12 C20 C2.7 ±8 Circuit Configuration N-ch Single P-ch Single N-ch Dual P-ch Dual 10 V 23 ― ― ― 28 ― ― ― ― 72 50 72 ― ― RDS(ON) Max (mΩ) 4.5 V 2.5 V 2.0 V 31 ― ― 40 28 ― 110 160 ― 41 30 ― 38 ― ― 49 66 100 110 ― 160 59 200 95 58 87 ― 105 ― ― 77 ― ― 105 ― ― 100 49 66 110 160 ― 1.8 V ― 85 300 90 ― ― 300 ― 250 ― ― ― ― 300 Qg Typ. (nC) TBD 18 6 19 34 7.5 6 11 11 14 10 14 7.5 6 Ciss Typ. (pF) TBD 0
800 860 600 470 600 590 470 Marking F2B F3A F3C F3B F3D F4A F5A F5B F5C F5D F6B F7A F8A Series U-MOSIV U-MOSIII U-MOSIII U-MOSIII U-MOSIV U-MOSIII U-MOSIII U-MOSIV U-MOSIV U-MOSIV U-MOSIII U-MOSIV U-MOSIII U-MOSIIIN-ch + P-ch N-ch + SBD P-ch + SBD?: No protection Zener diode between gate and source312.4N-ch+4■ FeaturesLow-VDSS MOSFETs (in Small SMD Packages)PS-8 Series … [Part Number: TPCP8xxx]? Same mounting area as for the VS-6 (TSOP-6) Series ? Using flat leads and the latest U-MOS process (U-MOSIV), the PS-8 Series offers a 70% reduction in RDS(ON) compared with the VS-6 Series.■ Product OfferingsPart Number TPCP8006 ? TPCP8001-H TPCP8004 ? TPCP8005-H ? TPCP8A05-H ? TPCP8003-H ? TPCP8101 TPCP8102 TPCP8103-H TPCP8201 TPCP8202 TPCP8203 TPCP8301 TPCP8302 TPCP8303 TPCP8401 TPCP8402 TPCP8404 ? TPCP8403 TPCP8BA1 TPCP8AA1 TPCP8J01 Absolute Maximum Ratings VDSS (V) VGSS ID (A)20 30 30 30 30 100 C20 C20 C40 30 30 40 C20 C20 C20 20 C12 30 C30 30 C30 40 C40 C20 20 C32 50 ±12 ±20 ±20 ±20 ±20 ±20 ±8 ±12 ±20 ±20 ±12 ±20 ±12 ±12 ±8 ±10 ±8 ±20 ±20 ±20 ±20 ±20 ±20 ±12 ±12 ±20 ― 9.1 7.2 8.3 11 8 2.2 C5.6 C7.2 C4.8 4.2 5.5 4.7 C5 C5 C3.8 0.1 C5.5 4.2 C3.4 4 C4 4.7 C3.4 C1.3 1.6 C5.5 0.1Circuit ConfigurationN-ch Single MOSBD N-ch Single P-ch Single N-ch Dual10 V― 16 8.5 12.9 12.5 180 ― ― 40 50 ― 40 ― ― ― ― ― 50 72 50 50 40 70 ― ― 35 ―RDS(ON) Max (mΩ) 4.5 V 2.5 V10 25 14.5 15.7 21.9 190 30 18 54 77 23 60 31 33* 40 3Ω* 38 77 105 100 100 60 105 180* 105* 49* ― 13.7 ― ― ― ― ― 41 30 ― ― 39 ― 60 45 57 4Ω 58 ― ― ― ― ― ― 260 140 ― ―1.8 V― ― ― ― ― ― 90 ― ― ― ― ― ― 95 ― ― 103 ― ― ― ― ― ― ― ― ― ―SeriesU-MOSIV U-MOSIII-H U-MOSIV U-MOSV-H U-MOSV-H U-MOSIII-H U-MOSIII U-MOSIV U-MOSIII-H U-MOSIII U-MOSIV U-MOSIII U-MOSIV U-MOSIV U-MOSV π-MOSVI U-MOSIII U-MOSIII U-MOSIV U-MOSIII U-MOSIV U-MOSIII U-MOSIII U-MOSII U-MOSII U-MOSIV U-MOSIV + Bip-TrP-ch Dual N-ch/P-ch Load Switch N-ch + P-ch N-ch + P-ch N-ch + P-ch MOSBD P-ch + NPN*: VGS = 4 V ?: No protection Zener diode between gate and sourceChip LGA Series■ Features? Chip-scale package for high-density board assembly (58% reduction in mounting area compared with the STP2 package)■ Product OfferingsPart Number TPCL4201 ? TPCL4203 ? TPCL4202 ? Absolute Maximum Ratings VDSS (V) VGSS ID (A)6 6 6Circuit ConfigurationN-ch Dual4.5 V31 36 40±12 20 24 ±12 ±12 30 ?: No protection Zener diode between gate and sourceRDS(ON) Max (mΩ) 4V 33 38 422.5 V52 55 64Qg Typ. (nC)11.5 TBD TBDCiss Typ. (pF)720 TBD TBDSeriesU-MOSV U-MOSV U-MOSVSTP2 Series ... [Part Number: TPCT4xxx]■ Features? The combination of a new chip design using Toshiba U-MOSIV process technology and a new small pump-structured package, offers low ON-resistance.■ Product OfferingsPart Number TPCT4203 TPCT4204 Absolute Maximum Ratings VSSS (V) VGSS IS (A)20 30 ±12 ±12 6 6Circuit ConfigurationN-ch Dual2.5 V49 52RSS(ON) Max (mΩ) 4V 4.5 V32 39 31 38Qg Typ. (nC)11 12Ciss Typ. (pF)790 780SeriesU-MOSIV U-MOSIVTSON Advance Series■ Features? The small thermally enhanced package gives a 64% reduction in mounting area compared with SOP-8, yet an equivalent maximum permissible power dissipation.■ Product OfferingsPart Number TPCC8007 ? TPCC8008 ? TPCC8003-H ? TPCC8001-H ? ? TPCC8002-H ? ? ?? TPCC8A01-H ? ? TPCC8006-H ? ? TPCC8005-H ? ? TPCC8102 ? TPCC8103 ? Absolute Maximum Ratings VDSS (V) VGSS ID (A)20 30 30 30 30 30 30 30 C30 C30 ±12 ±25 ±20 ±20 ±20 ±20 ±20 ±20 ±20 ±20 (27) (24) 13 22 22 21 24 26 (C15) (C18)Circuit Configuration10 V― (7) 16.9 6.9 6.9 8.3 6.9 6.0 (18.5) (13)RDS(ON) Max (mΩ) 4.5 V 2.5 V(5.5) TBD 19.3 10.2 10.2 12.0 8.6 7.3 (34 *) (24 *) TBD ― ― ― ― ― ― ― ― ―Qg Typ. (nC)TBD TBD 8.6 14.3 14.3 10.1 15.0 19.0 TBD TBDCiss Typ. (pF)TBD TBD 990 30
TBD TBDSeriesU-MOSIV U-MOSIV U-MOSIV-H U-MOSV-H U-MOSV-H U-MOSV-H U-MOSIV-H U-MOSV-H U-MOSV U-MOSVN-ch SingleMOSBD N-ch Single P-ch Single*: VGS = 4 V ?: Al straps ??: rg = 3.2 Ω (Typ.) ?: No protection Zener diode between gate and source32TSSOP-8 Series … [Part Number: TPCS8xxx]■ Features? Common-drain types are available: Ideal for lithium-ion battery protection and reverse-current prevention■ Product OfferingsPart Number TPCS8004 TPCS8009-H TPCS8007-H TPCS8008-H TPCS8104 TPCS8105 TPCS8209 TPCS8210 # TPCS8204 TPCS8208 # TPCS8211 TPCS8212 # TPCS8213 # TPCS8214 # TPCS8302 TPCS8303 Absolute Maximum Ratings VDSS (V) VGSS ID (A)200 150 200 250 C30 C30 20 20 20 20 20 20 20 30 C20 C20 ±20 ±20 ±20 ±20 ±20 ±20 ±12 ±12 ±12 ±12 ±12 ±12 ±12 ±12 ±12 ±12 1.3 2.1 1.9 1.7 C11 C10 5 5 6 6 6 6 6 6 C5 C5Circuit Configuration10 V800 350 450 580 12 13.5 ― ― ― ― ― ― ― ― ―