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Direction of Induced Current感应电流的方向
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3秒自动关闭窗口wind induced current
[医]吹流，风生海流
以下结果由
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是否希望搜索汉字和英语时显示搜索框提示&&&induced current
的翻译结果:
查询用时：0.413秒
&在分类学科中查询
Study of HEMP Induced Current in Cables with Finite Length Near the Ground
HEMP作用下近地有限长电缆外皮感应电流研究
Geomagnetically induced current (GIC) induced by Geomagnetic storm have the frequency of 0.001~0.1Hz, which compare with the frequency of 50 Hz can be thought of DC, which also can bring the DC magnetic biasing in the grounded transformer.
磁暴产生的地磁感应电流(GIC)频率为0.001～0.1Hz,与工频相比可视为准直流,也会在长距离输电线路的接地变压器中产生直流电流。
Induced Current Switching Tests of the Earthing Switches in Type ZFW-500 CIS
ZFW—500型GIS中接地开关开合感应电流试验
This paper surveyed the, visual activity response time of 1359 workers who exposed to 27.5kV industrial frequency electromagnetic fields for 22 Years which the elect(?) ic field intensity was 1.75～3.46 kV/m, magnetic flux density was 0.60～1.75mT and human induced current was 10.08～58.40μA, and 375 workers who had no exposed history.
通过对我国电力牵引达22年区段的27.5kV工频电场强度为1.75～346kV/m,磁感应强度为0.60～1.75mT,人体感应电流为10.08～58.40μA环境下作业的1359名工人和无电磁场接触史的375名工人的视—运动反应时值进行的测验和分析。
ELECTRICALLY ACTIVE DEFECTS IN
HgCdTe AND OPTO-ELECTRONIC PROPER-
FOCAL PLANE ARRAY BY LASER
BEAM INDUCED CURRENT
激光束感应电流法研究HgCdTe电活性缺陷和焦平面器件的光电特性
By utilizing laser beam surface charge measurement system, the width and extension of the power device surface depletion region which is passivated by organic or inorganic materials can be quickly measured, and the relationships of optical beam induced current (OBIC) curve with minority carrier diffusion length, surface recombination velocity and light absorption coefficient are theoretically analyzed.
采用激光探针表面电荷测量系统,实现了有机/无机介质膜保护下的高压硅器件表面耗尽区展宽的测量,分析了光感生电流(OBIC)曲线与硅表面少子扩散长度、表面复合速率以及波长相关吸收系数的关系.
Distribution of Induced Current In Molten Aluminum Purification with Traveling Magnetic Field
行波磁场净化铝熔体中的感生电流分布
Influence of Induced Current on Magnetic Flux Density in Soft-Contact Mold
感生电流对软接触结晶器内磁感应强度的影响
The problem exists in the typical self inductance phenomenon experiment,The improved experiment adopts LED to show,can demonstrate setting up an electric circuit and outage self inductance phenomenon、polarity of inducting EMF and direction of the induced current with a piece of circuit.
传统的自感现象演示实验存在不少问题,改进的实验采用发光二极管作显示,用一个电路可演示通电和断电自感现象、感生电动势的极性及感生电流的方向.
The Electron Beam Induced Current Character of Palladium Silicide-Silicon (P-Type) Schottky Barrier Diode
硅化钯-P型硅肖特基势垒二极管的电子束感生电流法观测
Results DMTI inhibited nicotine
induced current amplitude,and the effect of 0.08mmol·L
DMTI was similar with that of 0.02mmol·L
结果　 0 .0 8mmol·L-1DMTI抑制烟碱诱发电流幅度的作用与 0 .0 2mmol·L-1dHβE的作用类似。
Electron beam induced current technique is used to determine the hole diffusion length of N-type substrate at 100K for InSb multi-element arrays with DX-3A SEM.
用DX-3A型扫描电镜,在100K采用EBIC技术确定了InSb多元探测器N型基底的空穴扩散长度。
Rapid inhibitory effect of chelerythrine on acetylcholine
induced current in PC12 cells
白屈菜赤碱对PC12细胞乙酰胆碱诱发电流的快速抑制作用
The GAGA induced current was suppressed by (70.3 3.21)% when the DRGcells were pretreated with L-securinine (100
M bicucullinesuppressed the current by (86.26 5.62)%.
3．预先应用L-SEC(100μM)处理的DRG细胞GABA激发的电流(70.3±3.21)％被抑制。 100μM bicuculline预处理对GABA激发电流的抑制达(86.26±5.62)％。
The muscimol was more effective at activating the inward current than theGABA. In 16 DRG cells, bicuculline (50
M) and L-SEC (50
M) blocked themuscimol induced current by (77.5 4.88)% and (51.42 6.25)% respectively.
4．Muscimol可以比GABA更有效的激活内向电流，在16个DRG细胞中，bicuculline(50μM)可以阻断muscimol激发电流的(77.5±4.88)％，而L-SEC可以阻断(51.2±6.25)％。
查询“induced current”译词为用户自定义的双语例句&&&&我想查看译文中含有：的双语例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法，我们为您准备了出自英文原文的大量英语例句，供您参考。&&&&&&&&&&&&&&&&&&&& The present paper is a sequel to the accompanying paper I, where a theory is given for the impurity-induced current in germanium tunnel diodes. It is pointed out that for reasons similar to those given in connexion with the impurity-induced current, the phonon-assisted current in germanium diodes should be attributed to a second order process via (0, 0, 0) conduction band minimum rather than the first order process hitherto assumed. By methods similar to those developed in I, t... &&&&&&&&&&&&本文是对锗中声子散时引起的隧道电流的理论分析。指出这过程主要是二级过程,由导带底进入禁带的电子,被声子散射到联系着导带(0,0,0)谷的状态,再在结势垒场的作用下跃迁到价带。对这过程起主要作用的是在结势垒区中一定区域(大致是20厚)的晶体原子振动。这过程的几率几乎是各向同性的。从对称性的一般考虑,说明锗中纵声学支格波对隧道过程的贡献是最强的。&&&&&&&& In order to interpret the EBIC (electron beam induced current) photographs of scanning electron microscope, it is found nacessary to take the effect of photo injected carriers from forward biased pn junction into consideration. In this paper, results of constrast observation on a series of EBIC photographs of a trasistor at different levels of applied voltage are discussed. Based on the Bbers-Moll model for transistors together with some additional assumptions, we have been able to derive equati... &&&&&&&&&&&&通过扫描电子显微镜束感生电流图象的观察,提出了必须考虑多极管中正偏pn结光注入载流子的作用,本文给出了有关的实验结果,并基于Ebers-Moll模型和相应的假设,通过计算,得到一个可以同时考虑饱和电流、正偏pn结和反偏pn结处光注入载流子作用的统一公式,并与有关的实验结果进行比较,基本相符。&&&&&&&& The induced current method with which samples can be exchanged is described in this paper. The experimetal device is shown and the experimetal results of the critical currents and the joint resistances are given. A proposal to improve the method of measurement is made. &&&&&&&&&&&&本文介绍了能方便更换样品的感应电流法。描述了实验设备,给出了临界电流和接头电阻的实验结果。并提出了改进测量的方法&nbsp&&&&&&&&相关查询:
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2008 CNKI－中国知网
北京市公安局海淀分局 备案号：110 1081725
&2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社induced是什么意思，词典释义与在线翻译：
Adjective:
"a case of steroid-induced weakness"
induced的用法和样例：
用作形容词 (adj.)
The voltage induced in the terms of the armature winding is alternating.
在电枢绕组的各条边所感应的电压是交变的。
The EMP cortically induced current in coaxial cables near the ground is analysed by using Finite-Difference Time-Domain method in this paper.
本文采用时域有限差分法，分析电磁脉冲作用下，地面附近同轴电缆所感应的外皮电流。
Whice of the following discontinuities could be classified as a service induced discontinuity?
下列哪种缺陷可归纳类为使用导致的缺陷？
In order to reduce the damage misidentification induced by uncertain factors, a damage assessment method is developed.
摘要基于多源损伤信息可以有效解决由多种不确定性所导致的损伤误判问题。
感应电荷,感生电荷...
感应流,诱导流...
进气通风,诱导通风...
吸入通风,诱导通风...
诱导活动性,诱导放射...
感应放射性,感生放射...
诱导渗透,诱导入渗...
人造放射性同位素...
induced的海词问答与网友补充：
induced的相关资料：
【近义词】
说服（induce的过去...
【反义词】
自发的，自然的，本能的...
相关词典网站：56Ion-Beam Induced Current in High-Resistance Materials
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56Ion-Beam Induced Current in High-Resistance Materials
IonCbeaminducedcurrentin；1V.I.Yukalov1,2andE.P.Yu；CaixaPostal369,S?aoCarlo；2BogolubovLaboratoryofTh；JointInstituteforNuclear；3DepartmentofComputation；LaboratoryofComputingTec；Joint
IonCbeaminducedcurrentinhighCresistancematerials1V.I.Yukalov1,2andE.P.Yukalova1,3InstitutodeFisicadeS?aoCarlos,UniversidadedeS?aoPauloCaixaPostal369,S?aoCarlos,S?aoPaulo,Brazil2BogolubovLaboratoryofTheoreticalPhysicsJointInstituteforNuclearResearch,Dubna141980,Russia3DepartmentofComputationalPhysicsLaboratoryofComputingTechniquesandAutomationJointInstituteforNuclearResearch,Dubna141980,RussiaarXiv:cond-mat/
17 Feb 2000ThepeculiaritiesofelectriccurrentinhighCresistancematerials,suchassemiconductorsorsemimetals,irradiatedbyionbeamsareconsidered.ItisshownthatafterionCbeamirradiationanunusualelectriccurrentmayarisedirectedagainsttheappliedvoltage.Suchanegativecurrentisatransiente?ectappearingattheinitialstageoftheprocess.Thepossibilityofusingthise?ectforstudyingthecharacteristicsofirradiatedmaterialsisdiscussed.Anewmethodforde?ningthemeanprojectedrangeofionsissuggested.41.75.Ci,72.20.CiI.INTRODUCTIONTheirradiationofsemiconductorsandinsulatorsbyionbeamsisatoolthatisfrequentlyusedforstudyingormodifyingtheelectricpropertiesofthesehigh-resistancematerials(seee.g.[1,2]andreferencestherein).Assresultofionirradiation,heavilydopedchargedlayerscanbeformedinasample[3],withthedensityofionsinthelayerreaching1020cm?3.Theformationofstronglynonuniformchargedistributionsisthestandardsituationintheion-beamirradiation,whileforachievingauniformvolumeconcentrationofimplantedionsspecialtricksarerequired[4].Underthein?uenceofionirradiation,electricpropertiesofhigh-resistancematerialscanbeessentiallychanged[1,2,5],withadditionalpeculiaritiesresultingfromanonuniformdistributionofchargecarriers[6C9].High-resistancematerialsmean,asusual,thematerialswithaverypoorconcentrationofcarriers,suchassemiconductors,semimetals,orinsulatorsthat,beingirradiated,acquireconductingproperties[1,2,5].Theelectrontransportinsuchmaterialscanbewelldescribedinthesemiclassicaldrift-di?usionapproach[10,11].Theexistenceoftheimplantationinduceddamagescanbee?ectivelytakenintoaccountbymeansofcharacteristicparametersenteringthedrift-di?usionequations[10,11],forinstance,byspecifyingtheresistivityormobility[1,2].Whenanenergeticionstrikesasolidsurface,thereisaprobabilityofelectroncaptureresultingintheneutralizationofapartofimplantedionsthatbecomeelectricallyinactive.However,theneutralizedionscaneasilybeactivatedagainbyirradiatingthematerialwithlaserbeams[12C15].Inthepresentpaper,westudytheelectrictransportinhigh-resistancematerialswithastronglynonuniforminitialdistributionofchargecarriers,whichcanbeformedbyion-beamirradiation.Asfollowsfromtheabovediscussion,itisalwayspossibletopreparesuchconditions,e.g.employinglaseractivation[12C15],thattheinjectedionscouldbetheprincipalchargecarriers.Forconcreteness,weconsiderbelowpositiveions,thoughthisassumptionisnotprincipalandnegativeionscouldbetreatedinthesamefooting.II.PECULIARITIESOFELECTRICTRANSPORTThetransportpropertiesofhigh-resistancematerials,suchasextrinsicsemiconductors,areusuallydescribedbythedrift-di?usionapproach[10,11]consistingofthecontinuityandPoissonequations,respectively,?ρτ=0,???E??=4πρ,ε?(1)whereρ=ρ(??r,t)isthecha??j=j(??r,t)istheelτandεisthedielectricpermittivity.Thetotalcurrentdensityisε??jtot=??j+?t,???D???ρ,??j=μρE(2)whereμisthemobilityofcarriersandD=(μ/ε)kBTisthedi?usioncoe?cient.Theaveragecurrentthroughtheconsideredsampleisgivenbytheintegral??(t)=1JL,t→tμV0.Forotherphysicalquantitiesthereturntodimensionalunitsisdonebyaccomplishingthefollowingtransitions:forthedi?usioncoe?cient,D→DE0,E0≡V0Q0,Q0≡εAE0=εAV0ρ0andfortheelectriccurrent,j→j,ρ0≡Q0L2,Aτ0=εV0?t+??x2+ρ?x=4πρ,(4)wherethespaceandtimevariablesaresuchthat0&x&1,Thetotalcurrentdensity(2)readsjtot=ρE?D?ρ4π?Et&0.Theconditionthatthesampleisbiasedwithaconstantexternalvoltagenowwrites??1E(x,t)dx=1.0(6)NotethattheparametersεandμdonotappearinEqs.(4)becauseoftheusageofthedimensionlessunits.Aninitialconditiontothecontinuityequationisde?nedbythedistributionofionsaftertheirradiationprocess.ThedistributionofimplantedspeciescanbemodelledbytheGaussianform??Q,(7)ρ(x,0)=2binwhich0&a&1andQ=??1ρ(x,0)dx,Z=0??10??(x?a)2exp?2??.Withtheseconditions,thecurrent(8)becomesnegativeprovidedthat4πQ??12?12π(0&a&1)(13)fortheinitialcharge.Theaboveanalysisdemonstratesthatthenegativecurrentreallycanoccurprovidedsomespecialconditions,as(12)and(13),holdtrue.Toourknowledge,therehavebeennoexperimentalmeasurementsdemonstratingtheappearanceofsuchanegativecurrent.Thereforethepicturewedescribehereisatheoreticalpredictionofanovele?ect.Theoccurrenceofthisnegativecurrentisverysensitivetothecharacteristicsoftheirradiatedsampleaswellastotheinitialnonuniformdistributionofcarriers,whichsuggeststhepossibilityofusingthise?ectforstudyingthementionedproperties.Forinstance,themeanprojectedrangeofirradiatingionscouldbemeasuredinthisway.Thiscanberealizedasfollows.Assumethatforanion-irradiatedmaterialweobservedtheoccurrenceofthenegativecurrentJ(0)atinitialtime.LetuscomparetheobservedvalueJ(0)withformula(9)wherewehavetosubstitutethedistribution(7).Thepeakofthelatterisclosetothemeanprojectedrangeoftheirradiatingions.Withthegivenρ(x,0),theright-handsideofexpression(9)canbeexplicitlycalculated.Thisisbecausetheelectric?eldsatisfyingEq.(4),withthevoltagecondition(6),canbepresentedasthefunctionalE(x,t)=1+4πQ(x,t)?ofthedensityρ(x,t)enteringthroughQ(x,t)=??x????10??Q(x,t)dxρ(x′,t)dx′. Hence,foragivenρ(x,0),theelectric?eldE(x,0)isuniquelyde?nedbytheabovefunctional.Thus,equatingthecalculatedJ(0)fromformula(9)withthecorrespondingmeasuredvalue,weobtainanequationforthedimensionlessmeanprojectedrangea.Forexample,inthecaseofanarrowionlayer,we?nda=14πQ+J(0)2?εAV04πμQ2J(0).(14)Thisformuladirectlyrelatesthemeanprojectedrangeofions,λ,withtheknownparametersofthesystemandthemeasuredinitialcurrentJ(0).InderivingEq.(14),wehaveonlyusedthefactthattheinitialdistributionofionsisnarrow,b?1,whilethecurrentJ(0)can,ingeneral,beofanysign.Theadvantageofusingthee?ectofthenegativeelectriccurrentisthatthelatteralwaysrequiresarelativelynarrowinitialdistribution.Therefore,assoonasweobserveanegativecurrentJ(0),wecanemployformula(14)asarealisticapproximationfortheionmeanprojectedrange.WhentheinitialionlayerisnotnarrowandthecurrentJ(0)isnotnecessarynegative,sothatthedependenceoftheformulasonthestandarddeviationbbecomesimportant,thentwosituationscanhappen.Oneiswhenbisknownfromotherexperiments.Then,inorderto?ndthemeanprojectedrange,oneshouldproceedexactlyasisdescribedaboveequatingthemeasuredandcalculatedcurrentsJ(0).Ifthestragglingbisnotknown,itcanbefoundinthefollowingway.Assumethatattheinitialtimet=0thereappearsthenegativecurrent.Sincethisisatransiente?ect,existingonlyina?nitetimeinterval0≤t≤t0,thereissometimet=t0whenthecurrentchangesitssignbecomingnormal,i.e.positive,fort&t0.Atthesametimet=t0,thecurrenttheniszero,J(t0)=0.Therefore,thelatterequation,withthegivenexperimentallymeasuredt0,mayserveasanadditionalconditionde?ningthestragglingb.Itmayalsohappenthattheinjectedionlayerisnarrowbutlocatedclosetothesurface,sothata～b.Thenformula(14)canbecorrectedbytakingintoaccountthesecondterminEq.(9),whichgivesforthemeanprojectedrange??ALLV0+λ=4πQLQ&1.包含各类专业文献、专业论文、行业资料、各类资格考试、文学作品欣赏、应用写作文书、高等教育、外语学习资料、56Ion-Beam Induced Current in High-Resistance Materials等内容。