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IGBT的基础知识－－IGBT的基本结构，参数选择，使用注意
来源：不详
作者：佚名日 17:29
[导读] 1.IGBT的基本结构
绝缘栅双极晶体管（IGBT）本质上是一个场效应晶体管，只是在漏极和漏区之间多了一个 P 型层。根据国
1.IGBT的基本结构
绝缘栅双极晶体管（IGBT）本质上是一个场效应晶体管，只是在漏极和漏区之间多了一个 P 型层。根据国际电工委员会的文件建议，其各部分名称基本沿用场效应晶体管的相应命名。
图1所示为一个N 沟道增强型绝缘栅双极晶体管结构，N+区称为源区，附于其上的电极称为源极。 N+ 区称为漏区。器件的控制区为栅区，附于其上的电极称为栅极。沟道在紧靠栅区边界形成。在漏、源之间的P型区（包括P+和P一区）（沟道在该区域形成），称为亚沟道区（Subchannel&&&&& region ）。而在漏区另一侧的 P+ 区称为漏注入区（Drain injector ），它是 IGBT 特有的功能区，与漏区和亚沟道区一起形成 PNP 双极晶体管，起发射极的作用，向漏极注入空穴，进行导电调制，以降低器件的通态电压。附于漏注入区上的电极称为漏极。
为了兼顾长期以来人们的习惯，IEC规定：源极引出的电极端子（含电极端）称为发射极端（子），漏极引出的电极端（子）称为集电极端（子）。这又回到双极晶体管的术语了。但仅此而已。
IGBT的结构剖面图如图2所示。它在结构上类似于MOSFET ，其不同点在于IGBT是在N沟道功率MOSFET 的N+基板（漏极）上增加了一个P+ 基板（IGBT 的集电极），形成PN结j1 ，并由此引出漏极、栅极和源极则完全与MOSFET相似。
图1&&&&& N沟道IGBT结构&&
&&&&&&&&&&&&&&&&&&&图2&&&&& IGBT的结构剖面图
由图2可以看出，IGBT相当于一个由MOSFET驱动的厚基区GTR ，其简化等效电路如图3所示。图中Rdr是厚基区GTR的扩展电阻。IGBT是以GTR 为主导件、MOSFET 为驱动件的复合结构。
N沟道IGBT的图形符号有两种，如图4所示。实际应用时，常使用图2－5所示的符号。对于P沟道，图形符号中的箭头方向恰好相反，如图4所示。
IGBT 的开通和关断是由栅极电压来控制的。当栅极加正电压时，MOSFET 内形成沟道，并为PNP晶体管提供基极电流，从而使IGBT导通，此时，从P+区注到N一区进行电导调制，减少N一区的电阻 Rdr值，使高耐压的 IGBT 也具有低的通态压降。在栅极上加负电压时，MOSFET 内的沟道消失，PNP晶体管的基极电流被切断，IGBT 即关断。
正是由于 IGBT 是在N 沟道 MOSFET 的 N+ 基板上加一层 P+ 基板，形成了四层结构，由PNP－NPN晶体管构成 IGBT 。但是，NPN晶体管和发射极由于铝电极短路，设计时尽可能使NPN不起作用。所以说， IGBT 的基本工作与NPN晶体管无关，可以认为是将 N 沟道 MOSFET 作为输入极，PNP晶体管作为输出极的单向达林顿管。
采取这样的结构可在 N一层作电导率调制，提高电流密度。这是因 为从 P+ 基板经过 N+ 层向高电阻的 N一层注入少量载流子的结果。 IGBT 的设计是通过 PNP－NPN 晶体管的连接形成晶闸管。
2.IGBT模块的术语及其特性术语说明
集电极、发射极间处于交流短路状态，在栅极、发射极间及集电极、发射极间加上指定电压时，栅极、发射极间的电容
3.IGBT模块使用上的注意事项
1. IGBT模块的选定
在使用IGBT模块的场合，选择何种电压，电流规格的IGBT模块，需要做周密的考虑。
a. 电流规格
IGBT模块的集电极电流增大时，VCE(-)上升，所产生的额定损耗亦变大。同时，开关损耗增大，原件发热加剧。因此，根据额定损耗，开关损耗所产生的热量，控制器件结温（Tj）在 150oC以下（通常为安全起见，以125oC以下为宜），请使用这时的集电流以下为宜。特别是用作高频开关时，由于开关损耗增大，发热也加剧，需十分注意。一般来说，要将集电极电流的最大值控制在直流额定电流以下使用，从经济角度这是值得推荐的。
b.电压规格
IGBT模块的电压规格与所使用装置的输入电源即市电电源电压紧密相关。其相互关系列于表1。根据使用目的，并参考本表，请选择相应的元件。
2. 防止静电
IGBT的VGE的耐压值为±20V，在IGBT模块上加出了超出耐压值的电压的场合，由于会导致损坏的危险，因而在栅极-发射极之间不能超出耐压值的电压，这点请注意。
在使用装置的场合，如果栅极回路不合适或者栅极回路完全不能工作时（珊极处于开路状态），若在主回路上加上电压，则IGBT就会损坏，为防止这类损坏情况发生，应在栅极一发射极之间接一只10kΩ左左的电阻为宜。
此外，由于IGBT模块为MOS结构，对于静电就要十分注意。因此，请注意下面几点：
1)&&&&&&在使用模块时，手持分装件时，请勿触摸驱动端子部份。
2)&&&&&&在用导电材料连接驱动端子的模块时，在配线未布好之前，请先不要接上模块。
3)&&&&&&尽量在底板良好接地的情况下操作。
4)&&&&&&当必须要触摸模块端子时，要先将人体或衣服上的静电放电后，再触摸。
5)&&&&&&在焊接作业时，焊机与焊槽之间的漏泄容易引起静电压的产生，为了防止静电的产生，请先将焊机处于良好的接地状态下。
6)&&&&&&装部件的容器，请选用不带静电的容器。
3.并联问题
用于大容量逆变器等控制大电流场合使用IGBT模块时，可以使用多个器件并联。
并联时，要使每个器件流过均等的电流是非常重要的，如果一旦电流平衡达到破坏，那么电过于集中的那个器件将可能被损坏。&&&&&& 为使并联时电流能平衡，适当改变器件的特性及接线方法。例如。挑选器件的VCE(sat)相同的并联是很重要的。
4.其他注意事项
1)&&&&&&保存半导体原件的场所的温度，温度，应保持在常温常湿状态，不应偏离太大。常温的规定为5－35℃，常湿的规定为45—75％左右。
2)&&&&&&开、关时的浪涌电压等的测定，请在端子处测定。
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Application Note AN .0 December 2011Industrial IGBT ModulesExplanation of Technical InformationASIndustrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 2011Edition
Published by Infineon Technologies AG 59568 Warstein, Germany ? Infineon Technologies AG 2011. All Rights Reserved. Attention please! THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND (INCLUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN IN THIS APPLICATION NOTE. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. AN 2011-05 Revision History: date (), V1.0 Previous Version: none Authors: Infineon Technologies AG We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [WAR-IGBT-]2Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 2011Table of contents1 Abstract ........................................................................................................................................................ 5 2 Introduction .................................................................................................................................................. 5 2.1 2.2 2.3 Status of datasheets .......................................................................................................................... 7 Type designation ................................................................................................................................ 7 Module Label Code ..........................................................................................................................103 Datasheet parameters IGBT .....................................................................................................................10 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 Collector - emitter voltage VCES ........................................................................................................10 Total power dissipation Ptot ..............................................................................................................10 DC Collector Current IC nom ...............................................................................................................11 Repetitive peak collector current ICRM ..............................................................................................11 Reverse bias safe operating area RBSOA ......................................................................................12 Typical output and transfer characteristics ......................................................................................12 Parasitic Capacitances ....................................................................................................................15 Gate charge QG, gate current, internal and external gate resistor...................................................16 Parasitic turn-on ...............................................................................................................................183.10 Switching times ................................................................................................................................20 3.11 Short circuit ......................................................................................................................................22 3.12 Leakage current ICES and IGES ..........................................................................................................22 3.13 Thermal characteristics ....................................................................................................................23 4 Datasheet parameters Diode ....................................................................................................................24 4.1 4.2 4.3 4.4 Forward current IF characteristic ......................................................................................................24 Repetitive peak forward current .......................................................................................................25 Surge current capability IFSM and I t value .......................................................................................25 Reverse recovery .............................................................................................................................2525 Datasheet parameters NTC-thermistor ...................................................................................................27 6 Datasheet parameters Module .................................................................................................................29 6.1 6.2 6.3 6.4 Insulation voltage .............................................................................................................................29 Stray inductance L? ..........................................................................................................................29 Module resistance RCC’+EE’ ...............................................................................................................31 Mounting torque M ...........................................................................................................................313Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 20117 Symbols, Terms and Standards ...............................................................................................................32 8 References .................................................................................................................................................354Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 20111AbstractThe following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. This Application Note is intended to provide an explanation of the parameters and diagrams given in the datasheet of industrial IGBT modules. With the Application Note, the designer of power electronic systems requiring an IGBT module, is able to use the datasheet in the proper way and will be provided with background information.2IntroductionThe parameters listed in the datasheet give values that characterize the module as detailed as possible. With this information the designer should be able to compare devices from different suppliers to each other. Furthermore, the information should be sufficient to figure out the limits of the device. This document explains the interaction between the parameters and the influence of conditions like temperature. Datasheet values that refer to dynamical characterization tests, e.g. switching losses, are related to a specific test setup with their individual characteristics. Therefore, these values can deviate from a final user application. The attached diagrams, tables and explanations are referring to the datasheet of a FS200R07N3E4R_B11 rev.2.0 from
as example. The values and characteristics shown are not feasible to be used for design-in activities. For the latest version of datasheets please refer to our website. Infineon’s data sheets of IGBT power modules are organized as listed below ? Summarized device description on the front page as shown in Figure 1 ? ? ? ? ? ? ? ? ? Maximum rated electrical values of IGBT-chips Recommended electrical operating conditions of IGBT-chips Maximum rated electrical values of diode-chips Recommended electrical operating conditions of diode-chips NTC-Thermistor if applicable Parameters concerning the overall Module Operating characteristics Circuit diagram Package outline Terms and conditions of usage?5Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 2011Type designation Technology of the moduleStatus of Datasheet Picture of the moduleCircuit diagramTypical applications Electrical features Mechanical featuresLabel codeDate and Rev. of DatasheetMat. Nr and certificationFigure 1: Front page of the datasheetThere are also data sheets for the former IGBT Modules i.e. BSM100GAL120DLCK, where the front page as shown in Figure 1 does not exist.6Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 20112.1Status of datasheetsDepending on the status of the product development, the relating technical information contains: ? Target dataThe information in these data sheets are target values, which are expected to be achieved. Values from these target datasheets are useful for the initial calculations and approximations. The information and values of a target datasheet cannot be guaranteed for the final product. The dimensioning of an inverter should only be done with values based on a preliminary or final data sheet. During the development phase these modules are labeled with their part number and carry the suffix ENG. Modules with the ENG designation are supplied with a Sample Release Document. Important information can be taken from this additional Sample Release Document, e.g. which values of the module are already fixed and which values can still change during the development phase. ENG modules are used for preliminary and functional tests during the early stages of a product development phase. Samples marked as ENG are not liable to Product Change Notification (PCN). ? Preliminary dataThe difference between a preliminary and a final datasheet is that certain data values are still missing, for example the maximum values. These missing values in the preliminary data sheet are marked to be defined (t.b.d). Modules without ENG on the label reached series production status. All quality requirements are completely fulfilled. If any major changes to a module with series production status are necessary, customers must be informed by means of a PCN containing information about the type and extent as well as the time of the changes. This also applies to modules that have preliminary data sheets. ? Final dataThe final datasheet is completed with the values which are missing in the preliminary datasheet. Major changes of module characteristics or changes in datasheet values in the series status are accompanied by a PCN.2.2Figure 2.Type designationThe first section of the data sheet begins with the module type designation of the module as shown inFS 200 R 07 N3 E4 R B11Construction variation Particularity of the moduleChip TypeMechanical construction Blocking Voltage Functionality Current Rating Module TopologyFigure 2: structure of the type designation 7Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 2011The following tables give a detailed hint about the type designation of all Infineon’s industrial IGBT Modules. Example of FS200R07NE4R_B11 IGBT module FS FF FZ FS FP FB FM FR F4 F5 FD DD F3L 200 R S T 06 33 07 45 12 65 17 K H I M N1..3 O P U1..3 V W1..3 F H J L S E T P 1..n C D F G I R T K P B1..n S1..n 200 R 07 N E 4 R B11 Explanations Dual Switch Single Switch 3 phase full bridge Power Integrated Module Power Integrated Module with Single Phase Input Rectifier Matrix Converter Module Switched Reluctance Module H - Bridge Module with 5 switches Chopper configuration Dual Diode (for circuit see outline) 3-Level one leg IGBT module Max. DC-collector current Reverse conducting Fast diode Reverse blocking Collector-emitter-voltage in 100 V Mechanical construction: Module Package: IHM / IHV B-Series Package: PrimePACK? EconoDUAL? EconoPACK?1..3 EconoPACK?+ EconoPACK?4 Package: Smart 1..3 Easy 750 EasyPACK , EasyPIM? 1..3 Fast switching IGBT Chip High speed IGBT Chip SiC JFET Chip Low Loss IGBT Chip fast Short tail IGBT Chip Low Sat & fast IGBT Chip Thin IGBT3 Soft switching IGBT Chip Internal reference numbers With EmCon diode Higher diode current with very fast switching Diode Module in Big housing Integrated Cooling Reduced numbers of pins low temperature type design with common cathode Pre-applied thermal interface material Construction Variation Electrical selection8Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 2011Example of BSM100GB120DLx; old designation BSM 100 GB 120 DLx Explanations BSM Switch with IGBT and FWD BYM Diode module 100 Max. DC-collector current (A) GA Single switch with one IGBT and FWD GB Half bridge GD 3 phase full bridge GT 3 single switches and FWD GP Power integrated module B6 / Break / Inverter GAL Chopper module ( diode on collector side) GAR Chopper module (diode on emitter side) A Single diode 120 Collector-emitter-voltage in 10V DL Typ with low VCEsat DN2 Fast switching type DLC Low loss type with Emitter controlled diode S With collector sense G Design variation Exx Special type Example of MIPAQ Module: IFS150B12N3T4 Designation of MIPAQ (Module Integrating Power, Application and Quality) I FS 150 B 12 N3 T 4 Explanations I MIPAQ family FF Dual Switch FZ Single Switch FS 3 phase full bridge FP Power Integrated Module 150 Max. DC-collector current in A Integration level: B With current sensor S With fully digital current measurement V With gate driver and temperature measurement 12 Collector-emitter-voltage in 100 V N1..3 Package: EconoPACK?1..3 P Package: EconoPACK?4 U1..3 Package: Smart1..3 S fast Short tail IGBT Chip E Low Sat & fast IGBT Chip T Thin IGBT3 P Soft switching IGBT Chip 1..n Internal reference numbers B1..n Construction Variation S1..n Electrical selection9Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 20112.3Module Label CodeTo facilitate the handling of the module in point of view of logistic and traceability, all Infineon IGBT modules are considered as unique and labeled as shown in Figure 3. Each module can be identified with its material number, serial number, date code and lot number. All IGBT modules follow similar rules for labeling and identification. Bar code or DMX code is given on the modules for automated identification. Test data are stored for eleven years.Figure 3: Example of Module Label Code3Datasheet parameters IGBTThis section explains the electrical properties of the IGBT-chip inside the given IGBT module. If one of these maximum ratings presented in the datasheet is exceeded, it may result in a breakdown of the semiconductor, even if the other maximum ratings are not all used to their limits. Unless specified to the contrary, the values apply at a temperature of 25°C.3.1Collector - emitter voltage VCESThe permissible peak collector emitter voltage is specified at a junction temperature of 25°C as seen in Figure 4. This value decreases for lower temperatures with a factor of approximately .Figure 4: Collector-emitter voltage of the IGBT3.2Total power dissipation PtotThis parameter as shown in Figure 5 describes the maximum feasible power dissipation through the thermal resistance junction to module case RthJC. Therefore, the total power dissipation can be calculated in general to be: (1) (1)10Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 2011The considered IGBT module is an EconoPACK? 3 with a base plate structure. The power dissipation is related to ?T between junction and case as well as thermal resistance Rthjc between junction and case as in equation (2).(2) (2)At a case temperature of 25°C, the power dissipation is specified as a maximum value of:(3) (3)Figure 5: Maximum rating for Ptot The power dissipation of the diode chips can be calculated the same way as for the IGBTs, in accordance to equation(2).3.3DC Collector Current IC nomBased on the total power dissipation, the maximum permissible collector current rating of a module can be calculated with equation (3). Thus, in order to give a current rating of a module, the corresponding junction and case temperature has to be specified, as shown for example in Figure 6. Please note that current ratings without defined temperature conditions have no technical meaning at all. (4) (4) Since IC is not known in equation (3), VCEsat @ IC is also not known, but can be found within a few iterations. The ratings of continuous DC-collector current are calculated using maximum values for VCEsat to ensure the specified current rating, taking component tolerances into account.Figure 6: DC collector current3.4Repetitive peak collector current ICRMThe nominal current rating can be exceeded in an application for a short time. This is defined as repetitive peak collector current in the datasheet shown in Figure 7 for the specified pulse duration. In theory, this value can be derived from the feasible power dissipation and the transient thermal impedance Z th, if the duration of the over current condition is defined. However, this theoretical value is not taking any limitations of bond wires, bus-bars or power connectors into account.11Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 2011Therefore, the datasheet value is quite low compared to a theoretically calculated value, but it specifies a safe operation considering all practical limitations of the power module.Figure 7: Repetitive peak collector current3.5Reverse bias safe operating area RBSOAThis parameter describes safe operating conditions at turn-off for the IGBT of the power module. The chip can be driven within its specified blocking voltage up to twice its nominal current rating, if the maximal junction temperature defined for switching operation is not exceeded. The safe operating area of the power module is limited due to the module’s internal stray inductances as shown in Figure 8. With increasing switching currents, the allowed collector-emitter voltage is decreased. Furthermore, this degradation strongly depends on system related parameters, like stray inductance of the DC-Link and the current commutation slope during the switching transitions. The DC-Link capacitor is assumed to be ideal for this operating area. The current commutation slope is defined via a specified gate resistance and gate driving voltage.Module LevelChip Level Due to strayinductance inside module? V ? ? didt? L?DC-Link voltageFigure 8: Reverse bias safe operating area3.6Typical output and transfer characteristicsThis data can be used to calculate conduction losses of the IGBT. In order to contribute to a much better understanding of these parameters, the IGBT device structure as well as it’s difference in output characteristic compared to a power MOSFET is discussed briefly. After this, the datasheet parameters of the IGBT module are explained.12Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 2011Figure 9a shows the structure of a trench-field-stop IGBT with a simplified two-transistor equivalent circuit. The emitter-sided pn-junction of the pnp-transistor resembles the IGBT collector side. As a diode it leads for a characteristic voltage drop when the IGBT is conducting current. The intrinsic bipolar transistor of the IGBT is driven by a MOSFET. Therefore, the gate driving characteristic is quite similar to a power MOSFET. The output characteristic is different, which is illustrated in Figure 9b schematically. It shows the characteristic of turned-on devices at two different junction temperatures. The MOSFET as shown in Figure 9b is reverse conducting for negative drain-source voltages due to its intrinsic body diode. The IGBT has no body diode and thus an anti-parallel diode has to be used, when this operating mode is required. The advantage is that the external diode can be optimized separately to suit the IGBT’s switching characteristics. In contrast to the MOSFET that has an on resistance as a dominant parameter, the IGBT has a forward voltage drop. As a result, at very low load, indicated with 1 in Figure 9b, the MOSFET always has lower conduction losses than an IGBT. Both output characteristics depend on the junction temperature. The R ds(on) of a MOSFET typically increases by a factor of about two, when the junction temperature increases from 25°C to 150°C. The temperature coefficient of an IGBT’s forward voltage characteristic is much lower. At low load, the conduction losses even decreases with increasing temperature, due to the lower voltage drop at the pn-junction as represented in Figure 9b. At higher currents, the increase of the ohmic resistance is dominant. Due to this, a parallel connection of several IGBTs is possible and is commonly required for high current IGBT power modules.a) Emitter Gate Gate+ + nnb) IGBT IC VCE Tj1MOSFET MOSFET ID VDSn(substrate)Low load Pcond-IGBT(@150°C) & Pcond-IGBT(@25°C) High load Low loadICE IDSTj1IGBT Tj2IGBT 2 1p+ p+Tj2MOSFETIGBT 25°C IGBT 150°C MOSFET 25°C MOSFET 150°Cn(fieldstop)High load Pcond-IGBT(@150°C) & Pcond-IGBT(@25°C)VCE VDSCollectorp+Figure 9: Structure of Trench-Field-Stop IGBT and two-transistor equivalent circuit (a). Comparative output characteristics of a power MOSFET and IGBT (b)13Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 2011The transfer characteristic shows, that the turn-on threshold voltage decreases with the junction temperature as seen in Figure 10.VGEth @ Tvj=25°CVGEth @ Tvj=150°CFigure 10: Typical transfer characteristic As discussed in chapter 3.6, the output characteristic of the IGBT depends on the temperature of the junction. Figure 11a shows the collector current in conducting state as a function of the collector-emitter voltage at different junction temperatures. For currents lower than about 80A, the conduction losses decrease with increasing temperature. For higher currents, the conduction losses increase slightly. In the considered case, an increase in conduction losses of about 6% at nominal current rating 200A and a temperature increase from 25°C to 150°C can be observed.a) b)Pcond @ 25°C & Pcond @150°CPcond @ 25°C & Pcond @ 150°CSaturation modeLinear modeFigure 11: Typical output characteristic as function of the temperature (a) and gate-emitter voltage variation (b) Figure 11b shows the typical output characteristic for different gate-emitter voltages. The IGBT should not be operated in linear mode, as this causes excessive conduction losses. If the power dissipation is not limited in value and time, the device might be failing. Using 15V as typical gate drive voltage, this linear mode only occurs for short periods at the switching transitions, which is a normal operating condition for the IGBT.14Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 20113.7Parasitic CapacitancesThe dynamic characteristics of an IGBT are influenced by several parasitic capacitances. These are inherent parts of the die’s internal structure as represented in Figure 12a. A simplified schematic is shown in Figure 12b. The input capacitance Cies and the reverse transfer capacitance Cres are the basis for an adequate dimensioning of the gate driver circuit. The output capacitance Coss limits the dV/dt at switching transitions. Losses related to Coss can usually be neglected. The major parasitic capacitances inside the IGBT die are:? ? ?Input capacitance Cies comprising C1,C3,C4 and C6 Reverse transfer capacitance Cres including C2 and C5 Output capacitance Coss represented by C7 b)a)CGC=Cres CCE=Coss-Cres CGE=Cies-CresFigure 12: Parasitic capacitances of an IGBT, internal structure a), schematic b) The values of the parasitic capacitances strongly depend on the operating point of the IGBT. To measure these capacitances at biased gate or collector-emitter voltages, dedicated measurement circuits are applied according to IEC60747-8. Input capacitance Cies This parameter is determined using the setup as shown in Figure 13. Cies is measured at a biased collectoremitter voltage of typically 25V with the gate-emitter voltage typically set to zero. An inductor L is used to decouple AC-currents coming from the gate-emitter voltage source from the measurement equipment. The capacitance meter used has to be a high resolution capacitance bridge with sufficient measurement range.Figure 13: Basic circuit diagram for measuring the input capacitance C ies15Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 2011Output capacitance Coss The value is measured at biased collector-emitter voltages as represented in Figure 14. An inductor L is used to decouple AC-currents coming from the gate-emitter voltage source from the measurement equipment. The capacitance meter used has to be a high resolution capacitance bridge with sufficient measurement range.Figure 14: Basic circuit diagram for measuring the output capacitance C oss Reverse transfer capacitance Cres This parameter’s value is measured at a biased collector-emitter voltage of typically 25V. The gate-emitter voltage is typically set to zero. An inductor L is used to decouple AC-currents coming from the gate-emitter voltage source from the measurement equipment. The capacitance meter used has to be a high resolution capacitance bridge with sufficient measurement range.Figure 15: Basic circuit diagram for measuring the reverse transfer capacitance Cres3.8Gate charge QG, gate current, internal and external gate resistorThe value of the gate charge can be used to optimize the design of the gate driver circuit. The average output power that the gate driving circuit has to deliver can be calculated with data of the gate charge, gate driver voltages and switching frequency as given in equation (5). (5) (5) Within this formula, QG refers to the part of the gate charge that is truly active in the given design. What part is used is depending on the gate d an accurate approximation can be done using the gate-charge- curve.16Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 2011The real gate charge Q’G that has to be taken into account results from the diagram in Figure 16, by choosing the values that correspond to the gate driver’s output voltage:Typical gate charge diagram 1200V IGBT420,0015,0010,005,00VGE [V]0,00 0,000,100,200,300,400,500,600,700,800,901,00-5,00-10,00-15,00-20,00standardized QGate/QGate_nominal [?C]Figure 16: Typical gate charge curve of an 1200V IGBT Typical values used in industrial applications include designs with a turn-off voltage VGE=0V as well as designs featuring negative supply like VGE=-8V ? ? Q’G = 0.62 ? QG Q’G = 0.8 ? QG for 0V/15V for -8V/15VAt a switching frequency of fsw=10 kHz and a driver output of +15/ -8V, the required output power of the gate driving circuit PGdr can be calculated using the adapted gate charge from Figure 16 and the gate charge of the datasheet given in Figure 17 to be .Figure 17: Gate charge and internal gate resistor The theoretical gate drive peak current can be calculated according to equation (6), knowing the gate drive voltages and gate resistances. The gate resistor is the sum of external and internal gate drive resistance. Figure 17 shows the value for the internal resistance to be considered. (6) (6) In practice this peak current will not be reached, because it is limited by stray inductances and non-ideal switching transitions of a real gate driving circuit.17Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 2011The datasheet value given for the internal gate resistor is to be understood as single resistance and results of paralleling resistors inside the IGBT module as shown in Figure 18. These internal resistors lead to improve internal current sharing. This value should be considered as one part of total gate resistor to calculate the peak current capability of a driverDC+ C Rgext GE C RgextR’g1R’g2R’g3 ACGER’g4R’g5R’g6DC-Figure 18: internal gate resistor of the IGBT The designer can use the external gate resistor to influence the switching performance of the IGBT. Minimum RGon is limited by turn-on di/dt, minimum RGoff is limited by turn-off dV/dt. Too small gate resistors can cause oscillation and may lead to the damage of the IGBT or diode. The minimum recommended RGext is given in the switching losses test condition as shown in Figure 19.Figure 19: External gate resistors3.9Parasitic turn-onWith the parasitic capacitances of the IGBT, noted in the datasheet, dV/dt induced parasitic turn-on phenomena can occur. The cause of a possible parasitic turn-on is based on the intrinsic capacitive voltage divider between collector-gate and gate-emitter. In consideration of high voltage transients across collector-emitter, this intrinsic capacitive voltage divider is much faster than an external gate driving circuit, which is limited by parasitic inductances. Therefore, even if the gate driver turns off the IGBT with zero gate-emitter voltage, transients of collector-emitter voltage lead to an increase of the gate-emitter voltage. If the gate emitter voltage exceeds the gate threshold voltage VGEth, the IGBT will turn on. Neglecting the influence of the gate driving circuit, the gate-emitter voltage can be calculated by (7) (7)18Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 2011The quotient Cres/Cies should be as low as possible. To avoid a parasitic dV/dt induced turn-on, the quotient Cies/Cres for the FS200R07N3E4_B11 is about 35. Furthermore, the input capacitance as shown in Figure 20 should be as low as possible to avoid gate driving losses.Figure 20: Parasitic capacitances of the IGBT The parasitic capacitances are measured at a constant collector-emitter voltage of 25V as can be seen in Figure 20. The gate-emitter capacitance CGE as shown in Figure 21 can be approximated to be constant over the collector-emitter voltage as shown in equation (7). The reverse transfer capacitance CGC strongly depends on the collector-emitter voltage and can be estimated according to equation (8). (8) (8)(9) (9)Figure 21: Approximation of input and reverse transfer capacitance as function of the collector-emitter voltage according to equation (8) and equation (9) Consequently, the robustness against dV/dt induced parasitic turn-on increases with the collector-emitter voltage as seen in equation (7).19Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 20113.10Switching timesThe switching times in the datasheet provide useful information to determine an appropriate dead time between turn-on and turn-off of the complementary devices in a half bridge configuration. For further information about dead time calculation please refer to AN2007-04 available at Infineon’s website. ? Turn-on delay time td on: Time it takes from getting the gate-emitter voltage to 10% of the rated value to the moment the collector current reaches 10% of its nominal size ? ? Rise time tr: Time which the collector current takes to rise from 10% to 90% of his nominal value Turn-off delay time td off: Time necessary from getting the gate-emitter voltage to 90% of the rated value to the moment the collector current reaches 90% of its nominal size ? Fall time tf: Time which the collector current takes to fall from 90% to 10% of his nominal value The switching times in the datasheet are defined as schematically shown in Figure 22:90% VGE V GE 10% VGE t1IC90% IC90% IC10% IC td on tr td off tf10% IC2 % ICtV CE 2% V CE 10 % VCE tEoff P Eont1t2t3t4tFigure 22: Specification of rise and fall times to calculate loss energies1Application note 2007-04: How to calculate and minimize the dead time requirement for IGBTs properly.20Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 2011The switching times will not give reliable information about switching losses, because voltage rise and fall times as well as current tail are not specified. Therefore, energy losses per pulse are given separately. The switching losses per pulse are defined using the integrals:(10) (10) The integration limits for the switching losses are given in Figure 22: ? ? For the turn-on energy per pulse Eon: From t1 to t2 For the Turn-off energy per pulse Eoff: From t3 to t4Switching times and thus energy per pulse strongly depend on a variety of application specific operating conditions like gate driving circuit, layout, gate resistance, switching voltages and currents as well as junction temperature. Therefore, datasheet values can only give an indication for the switching performance of the power module. For more accurate values, detailed simulations taking application specific parameters into account or experimental investigations are necessary. Typically, switching times and energy per pulse are characterized at nominal operating conditions for different temperatures as noted in Figure 23. The energy per switching pulse, given in Figure 24 as a function of the collector current and the gate resistance, gives an indication of the switching performance under typical operating conditions.Figure 23: Switching times and energiesa) b)Figure 24: Switching losses per pulse as a function of the collector current and the gate resistance21Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 20113.11Short circuitThe short circuit characteristic strongly depends on application specific parameters, like temperature, stray inductances, gate driving circuits and the resistance of the short circuit path. For device characterization, a test setup as shown in Figure 25a is used. One IGBT is short circuited while the other IGBT is driven with a single pulse. The corresponding typical voltage and current waveforms are illustrated in Figure 25b. The current in the conducting IGBT increases rapidly with a current slope that is depending on parasitic inductances and the DC-Link voltage. Due to desaturation of the IGBT, the current is limited to about 5 times the nominal current in case of IGBT3 and the collector-emitter voltage remains on the high level. The chip temperature increases during this short circuit due to high currents and thus high losses. Because of the increasing chip temperature the current decreases slightly while operating in short circuit condition. At a defined short-circuit-withstand time tsc the IGBT has to be switched off to avoid a device failure.a) b)V, I VCEISC VGE VCE VGE IC t = t0 10% IC tSCIC10% IC t = tP tFigure 25: Short circuit test setup (a) and typical voltage/current waveforms during short circuit test (b) The data of the measured short circuit and the applied parameters are noted in the datasheet as depicted in Figure 26. All of Infineon's IGBT modules are designed to achieve a short circuit-withstand-time of up to 10?s. The IGBT3 600V is an exception as it only features a short circuit withstands time of t p = 6?sFigure 26: Short circuit data3.12? ?Leakage current ICES and IGESThe maximum collector-emitter cut-off current describes the leakage current between the collector and emitter, when the IGBT is in blocking mode The gate-emitter leakage current gives a hint about the maximum leakage current between gate and emitter, with collector-emitter short circuited and maximum gate-emitter voltage applied.Two major types of leakage currents as given in Figure 27 have to be considered:Figure 27: Leakage currents 22Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 20113.13Thermal characteristicsThe values of power dissipation and current ratings as discussed in chapter 3.2 and 3.3 have no meaning without specification of temperatures as well as thermal resistances. Therefore, in order to compare different devices, it is also necessary to compare thermal characteristics. More information about the thermal equivalent circuit can be found in AN2008-03 . When power modules with a flat base plate or discrete devices are characterized, junction-, case-, and heat sink temperatures are observed. The thermal resistance of junction to case and case to heat sink are specified in the datasheet as given in Figure 28. The datasheet value of the RthCH with a referenced thermal resistance of the thermal interface material is a typical value under the specified conditions.2Figure 28: Thermal resistance IGBT, junction to case and case to heat sink Thermal resistance characterizes the thermal behavior of the IGBT module at steady state, whereas the thermal impedance characterizes the thermal behavior of the IGBT module at transient modus or during short current pulses. Figure 29a shows transient thermal impedance ZthJC as a function of the time. a) b)r1TVJ c1r2r3r4c2c3c4TFFigure 29: a) Transient thermal impedance junction to case and b) transient thermal model2Application note 2008-03: Thermal equivalent circuit model23Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 2011The main power losses of the IGBT module are dissipated from the silicon die to the heat sink through different materials. Each material into the dissipation path has its own thermal characteristics. As a result, the thermal impedance behavior can be modeled with the appropriated coefficients of the IGBT module and is given as diagram ZthJC(t) as shown in Figure 29a. The separate RC-elements from Figure 29b have no physical meaning. Their values are extracted from the measured heating-up curve of the module by a corresponding analyzis tool. The data sheet includes the partial fraction coefficients in tabular form as shown in Figure 29a. The values of the capacitances can be calculated by: (11) (11)4Datasheet parameters DiodeThis part of the application note describes the electrical characteristics of the diode.4.1Forward current IF characteristicThe maximum permissible diode forward current rating can be calculated with equation (12). To give a current rating of a module, the corresponding junction and case temperature have to be specified, for example in Figure 30. Please note that current ratings without defined temperature conditions have no technical meaning at all. Since IC is not known in equation (3), VCEsat @ IC is also not known, but can be found within a few iterations. The ratings of continuous DC-collector current are calculated with maximum values for VF to ensure the specified current rating, taking component tolerances into account. (12) (12) Figure 30 depicts the typical forward characteristic of the implemented diode at different junction temperatures. A negative temperature coefficient of the diode ’s forward voltage drop can be observed, which is typical for minority-carrier devices. Therefore, the conduction losses of the diode decrease with increasing temperatures.Figure 30: Forward characteristic of diode datasheet 24Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 20114.2Repetitive peak forward currentThe nominal diode current rating can be exceeded in an application for a short time. This is defined as repetitive peak forward current in the datasheet for the specified pulse duration, for example 1ms as noted in Figure 31. In theory, this value can be derived from the feasible power dissipation and the transient thermal impedance Zth, if the duration of the over current condition is defined. However, this theoretical value is not taking any limitations of bond wires, bus-bars or power connectors into account.Figure 31: Repetitive peak forward current4.32Surge current capability IFSM and I2t value2This value defines the surge current capability of the diode. The I t value applied should be lower than the specified I t value and tp should not exceed 10ms as mentioned in Figure 32.Figure 32: Values of the surge capability4.4Reverse recovery-When a diode is in conducting state, the p-n junction is forward-biased as depicted in Figure 33. Holes are injected in the n- region and become minority carriers, which finally recombine with electrons from the n region. Before the diode can turn into blocking mode, the stored minority charge inside the n region has to be reduced by active means or by passive means, via recombination. Both mechanisms occur simultaneously. The actively removed minority charge is called recovered charge Q r. This charge causes a current overshoot at turn-on transition of the complementary switch in the half-bridge and in turn increases the losses.-Figure 33: Power diode under forward-bias condition A schematic current and voltage waveform of a soft-recovery Emitter Controlled diode during turn-off transition can be seen in Figure 34. The characterized peak reverse recovery current IRM given in the datasheet section on Figure 35, is defined as the difference between the maximum negative current peak and zero current. The recovered charge results from:(13) (13) The integration limits are defined as t1 = t @ IF =0 and t2 = t @ as shown in Figure 34.25Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 2011The losses due to reverse recovery can be calculated with the recovered energy per pulse. The energy is determined as defined in equation (14):VR [V] I F [A]I F= 010% VR Qr2% IRM tIRMVRPrec [W]IF Erect1t’1t t2Figure 34: Schematic voltage and current waveform of a soft-recovery diode during turn-off transition(14) (14) The integration limits are chosen for the time t’1 corresponding to 10% of the diode reverse voltage VR and the time t2 which reverse recovery current IRM peak attains 2%. The recovered charge and thus switching losses caused by the reverse recovery of the diode strongly depend on junction temperature as well as switching commutation slope.Figure 35: Reverse recovery current, charge and reverse recovery energy26Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 2011To give an indication of application specific switching losses, the losses per diode turn-off pulse as noted in the datasheet are a function of diode forward current and gate resistance of the switching IGBT as represented in Figure 36. The variation in gate resistance is an equivalent to a variation in commutation current slopes.Figure 36: Reverse recovery energy per pulse as a function of diode conducting current and gate resistance5Datasheet parameters NTC-thermistorOne of the most important parameters in power electronic devices is the chip temperature. The measurement of this temperature during the operation is very difficult. One approach to estimate the real chip temperature in steady state is to use the NTC inside the IGBT module. This method is not adequate for measurement of fast variation of the chip temperature. The temperature of the chips can be calculated using a thermal model and measuring the temperature at the NTC. The resistance of the NTC can be calculated as a function of the NTC temperature T 2 (15) The resistance R25 at temperature is specified in the datasheet as in Figure 37. can be calculated with equation (16). With measurement of the actual NTC-resistance R2, the temperature(16) (16)The maximum relative deviation of the resistance is defined at a temperature of 100°C defined by Figure 37 To avoid self heating of the NTC, the power dissipation inside the NTC has to be limited.from27Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 2011To limiting the self heating of the NTC up to a maximum value of 1K, the current through the NTC can be calculated according to equation (17). More detailed information how to use the NTC inside the IGBT module is provided in AN2009-103(17) (17)Figure 37: Characteristic values of the NTC-thermistor To calculate the NTC resistance as well as temperature more accurately, B-values are required. The B-value depends on the temperature range considered. Typically a range of 25 to 100°C is of interest and thus B25/100 has to be used. In case a lower temperature range is in focus, the B-values B25/80 or B25/50 can be used, which leads to more accurate calculation of the resistance in these lower ranges.Figure 38: B-values of the NTC-thermistor The use of the NTC for temperature measurement is not suitable for short circuit detection or short term overload, but may be used to protect the module from long term overload conditions or malfunction of the cooling system.3Application note 2009-10: Using the NTC inside a power electronic module28Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 20116Datasheet parameters ModuleThis part covers electrical topics related to the mechanical construction of the IGBT module.6.1Insulation voltageTo verify the rated insulation voltage value of the IGBT module, all terminals are joined together and connected to the high side of a high voltage source. The base plate is connected to the low side of the high voltage source. This high voltage source with high impedance must be able to supply the required insulation voltage Viso. A test voltage is slowly raised to the specified value determined by equation (18) and maintained at that value for the specified time t. The voltage is then reduced to zero. Infineon’s IGBT modules are designed to achieve at least the basic insulation class 1 according to IEC 61140. For IGBT Modules with an internal NTC, the functional insulation requirement is fulfilled between the grounded NTC terminals and the remaining control and power terminals connected together and powered by the high voltage source. (18) (18) The appropriate insulation voltage depends on the maximum rated collector-emitter voltage of the IGBT. Most drive applications require an insulation voltage of 2.5kV for 1700V IGBT modules. For the traction application, the required insulation voltage is defined to be 4kV for the same IGBT blocking voltage of 1700V. Therefore it is important to focus on the application field during the choice of the IGBT module.Figure 39: Insulation test voltage The insulation test voltage in the datasheet as shown in Figure 39 is measured before and after reliability tests of the power module and is furthermore part of failure criteria of such stress tests. The insulation voltage of the NTC inside the IGBT fulfills a functional isolation requirement only. In case of failures for example of the gate driving circuit, a conducting path can be formed by moving bond wires that change their position during the failure event or by a plasma path forming as a consequence of arcing during failure. Therefore, if insulation requirements higher than a functional insulation have to be achieved, additional insulating barriers have to be added externally.6.2Stray inductance L?Stray inductances lead to transient over voltages at the switching transients and are a major source of EMI. Furthermore, in combination with parasitic capacitances of the components, they can lead to resonant circuits, which can cause voltage and current ringing at switching transients. The transient voltage due to stray inductances can be calculated with: (19) (129Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 2011Consequently, the stray inductances have to be minimized in order to reduce voltage overshoot at turn-off transitions. The value of the stray inductance as given in Figure 40, depends on the IGBT topology and would be understood as: ? The inductance of single switch modules?The inductance of one switch for modules with two switches?The loop with the highest inductance for Half Bridge, 4-PACK and Six PACK modules specifies the inductance of one bridge?The largest loop for PIM modules specifies the inductance from P to NFigure 40: Module stray inductance30Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 20116.3Module resistance RCC’+EE’The lead resistance of the module is a further contributor to voltage drop and power losses. The specified value in the datasheet characterizes the lead resistance between the power terminals of one switch as mentioned in Figure 41. According to the equivalent circuit shown in Figure 42, the module’s lead resistance is defined as: (20) (21)Figure 41: Module lead resistance P C’CRCC’E E’’REE’ RE’’E’E’N Figure 42: Equivalent circuit of module lead resistance6.4Mounting torque MThe torque for the mechanical mounting and electrical connection of the module is specified in the datasheet as noted in Figure 43. These values are important to ensure the proper clamping force of the module to the heat sink. For modules with screwable power terminals, an additional mounting torque for terminal connection is given in the datasheet to ensure a reliable mechanical and electrical connection of bus-bars.Figure 43: Module mounting torque requirements31Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 20117Symbols, Terms and StandardsSymbol and terms used in this document are a part of the standards specification as listed below:Symbols A C Co(er) Co(tr) Ciss CossCrss Cth CDS CGD CGS CMi Cσ D diF/dt di/dt dirr /dt dv/dt E EA EAR EAS Eoff Eon F G Gfs I I IAR ID IDpuls IDSS IDSV IC ICES ICpulsTerms Anode Capacitance, collector Effective output capacitance, energy related Effective output capacitance, time related Input capacitance Output capacitance Reverse transfer capacitance Thermal capacitance Drain-Source capacitance Gate-Drain capacitance Gate-Source capacitance Miller capacitance Stray capacity Pulse duty factor/duty cycleD = tp/T Rate of diode current rise Rate current rise general Peak rate fall of reverse recovery current Rate of diode voltage rise Energy Avalanche energy Avalanche energy, repetitive Avalanche energy, single pulse Turn-off loss energy Turn-on loss energy Frequency Gate Transconductance Current Current, instantaneous value Avalanche current, repetitive DC drain current DC drain current, pulsed Drain cutoff current Drain cutoff current with gate voltage applied DC collector current Collector cutoff current Collector current, pulsed32Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 2011Symbols IF IFSM IGSS IRM ISM IGES IL IRRM K L LL Lp Lσ PAV Psw Ptot QG QGS QGD QGtot Qrr RDS(on) RG RGE RGon RGoff RGS Ri RL RthCH RthHA RthJA RthJC RthJS S T TA TCTerms General diode forward current Diode current surge crest value 50 Hz sinusoidal Gate-Source leakage current Diode peak reverse recovery current Inverse diode direct current, pulsed Gate-emitter leakage current Current through inductance Maximum reverse recovery current Cathode Inductance Load inductance Parasitic inductance (e.g. lines) Leakage inductance Avalanche power losses Switching power losses Power dissipation Gate charge Charge of Gate-Source capacitance Charge of Gate-Drain capacitance Total Gate charge Reverse recovered charge Drain-Source on state resistance Gate resistance Gate-emitter resistance Gate-turn on resistance Gate-turn off resistance Gate-Source resistance Internal resistance (pulse generator) Load resistance Thermal resistance, case to heat sink Thermal resistance, heat sink to ambient Thermal resistance, junction to ambient Thermal resistance, junction to case Thermal resistance, junction to soldering point Source C temperature Ambient temperature Case temperature33Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 2011Symbols t t1 td(off) td(on) t f, t F Tj tp Tj(max) Tjop(max) toff ton tr trr Tstg Tsold V VIN V(BR)CES V(BR)DSS VCC VCE VCEsat VCGR VDD VDGR VDS VF VGE VGE(th) VGS VGS(th) VSD Vplateau ZthJA ZthJS ZthJCTerms Time, general Instant time Turn-off delay time Turn-on delay time Fall time Chip or operating temperature Pulse duration time Maximum permissible chip temperature Maximum permissible chip operating temperature Turn-off time Turn-on time Rise time Reverse recovery time Storage temperature Soldering temperature Voltage, instantaneous value Drive voltage Collector-emitter breakdown voltage Drain-Source Avalanche breakdown voltage Supply voltage Collector-emitter voltage Collector-emitter saturation voltage Collector-gate voltage Supply voltage Drain-Gate voltage Drain-Source voltage Diode forward voltage Gate-emitter voltage Gate threshold voltage (IGBT) Gate-Source voltage Gate threshold voltage Inverse diode forward voltage Gate plateau voltage Transient thermal resistance, chip to ambient Transient thermal resistance, chip to solder point Transient thermal resistance, chip to case34Industrial IGBT Modules Explanation of Technical InformationApplication Note AN .0 December 20118ReferencesInfineon Technologies AG 'IGBT Modules Technologies, Driver and Application' ISBN978-3-00-35
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